机构

• 半导体研究所 [6]
• 长春光学精密机械与物... [2]
• 金属研究所 [1]
• 宁波材料技术与工程研... [1]

采集方式

• OAI收割 [10]

内容类型

• 会议论文 [10]

发表日期

• 2011 [1]
• 2006 [3]
• 2000 [1]
• 1999 [2]
• 1998 [3]

学科主题

• 半导体材料 [4]
• 半导体物理 [2]
• Engineerin... [1]
• Materials ... [1]
• Physics [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Thermoelectric Properties of the Bi2Te3 Compound Prepared by an Aqueous Chemical Method Followed by Hot Pressing 会议论文  OAI收割 MAY 30-JUN 03, 2010 作者:  Zhang, T.;  Chen, J. M.;  Jiang, J.;  Li, Y. L.;  Li, W.   |  收藏  |  浏览/下载：3/0  |  提交时间：2021/12/02 PERFORMANCE  BI-2(TE,SE)(3)  ALLOYS   第一原理研究TiX2系统热力学特性的同位素效应 会议论文  OAI收割 2006北京国际材料周暨中国材料研讨会, 北京, 2006-09 胡朝浩; 陈德敏; 施立群; 王元明; 杨柯 收藏  |  浏览/下载：52/0  |  提交时间：2013/08/21 同位素效应  系统热力学特性  密度泛函理论  密度泛函微扰  准简谐近似  第一原理  钛化合物   Anti-stokes fluorescent cooling by energy transfer (EI CONFERENCE) 会议论文  OAI收割 作者:  Zhang J.;  Wang Y.;  Wang Y.;  Wang Y.;  Wang Y. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 A new model on the mechanism of anti-Stokes fluorescent cooling is proposed  based on which incident laser induces a phonon-assisted energy transfer from one luminescent center to another in an optical medium and causes medium cooling when the energy transfer is an anti-Stokes process and absorbs phonons. Here  we develop the model in two cases: two-phonon-assisted energy transfer for a small energy mismatch and one-phonon-assisted energy transfer for a large energy mismatch. The dependence of relative cooling efficiency on photon energy and temperature is also discussed in evaluating the new mechanism. 2006 Elsevier B.V. All rights reserved.   Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser  and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high  LO  TO  multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001) 会议论文  OAI收割 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Zhu JJ; Liu SY; Liang JW 收藏  |  浏览/下载：3/0  |  提交时间：2010/11/15 Raman spectrum  thin film  chemical vapor deposition  SCATTERING  SI   Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy 会议论文  OAI收割 9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999 Liu JP; Kong MY; Huang DD; Li JP; Sun DZ 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 STRAIN-SHIFT COEFFICIENTS  SI1-XGEX  SILICON  PHONONS   High temperature annealing behaviors of luminescent SIOx : H films 会议论文  OAI收割 symposium e on luminescent materials at the 1999 mrs spring meeting, san francisco, ca, apr 05-08, 1999 Ma ZX; Xiang XB; Sheng SR; Liao XB; Shao CL; Umeno M 收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29 RAMAN-SPECTRA  SILICON  PHOTOLUMINESCENCE   High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures 会议论文  OAI收割 13th international conference on high magnetic fields in semiconductor physics, nijmegen, netherlands, aug 10-14, 1998 Wang YJ; Jiang ZX; McCombe BD; Peeters FM; Wu XG; Hai GQ; Eustis TJ; Schaff W 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 cyclotron resonance  electron-phonon interaction  electron-electron interaction  high magnetic fields  EXCHANGE ENHANCEMENT  GAAS  HETEROSTRUCTURES  GAS  LIMIT  HETEROJUNCTIONS  POLARONS  MODES  LEVEL   Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 会议论文  OAI收割 8th international conference on modulated semiconductor structures, santa barbara, california, jul 14-18, 1997 Wang YJ; Nickel HA; McCombe BD; Peeters FM; Shi JM; Hai GQ; Wu XG; Eustis TJ; Schaff W 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 resonant magnetopolaron effects  GaAs/AlGaAs quantum well structures  interface phonons  electron-optical-phonon interaction  POLARON-CYCLOTRON-RESONANCE  PHONON MODES  GAAS  HETEROSTRUCTURES  SUPERLATTICES  ELECTRONS   Iron related emission spectra in InP 会议论文  OAI收割 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 Han YJ; Liu XL; Jiao JH; Lin LY; Chang Y 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 ABSORPTION-SPECTROSCOPY  FE