机构

• 半导体研究所 [28]

采集方式

• OAI收割 [28]

内容类型

• 期刊论文 [28]

发表日期

• 2017 [1]
• 2016 [1]
• 2014 [1]
• 2011 [2]
• 2009 [1]
• 2008 [3]
• 更多

学科主题

• 半导体物理 [28]

筛选

浏览/检索结果: 共28条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy 期刊论文  OAI收割 Nanotechnology, 2017, 卷号: 28, 页码: 135704 (9pp) 作者:  Hyok So;  Dong Pan;  Lixia Li;  Jianhua Zhao 收藏  |  浏览/下载：12/0  |  提交时间：2018/07/02 Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111) 期刊论文  OAI收割 materials science in semiconductor processing, 2016, 卷号: 52, 页码: 68-74 Lichun Zhang; XuewenGeng; GuoweiZha; JianxingXu; SihangWei; BenMa; Zesheng Chen; XiangjunShang; HaiqiaoNi; ZhichuanNiu 收藏  |  浏览/下载：15/0  |  提交时间：2017/03/10 Structure and Magnetic Properties of (In, Mn) As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy 期刊论文  OAI收割 chinese physics letters, CHINESE PHYSICS LETTERS, 2014, 2014, 卷号: 31, 31, 期号: 7, 页码: 078103, 078103 作者:  Pan, D;  Wang, SL;  Wang, HL;  Yu, XZ;  Wang, XL   |  收藏  |  浏览/下载：16/0  |  提交时间：2015/03/25 Surface alloy formation of noble adatoms adsorbed on Si(111)-root 3 x root 3-Pb surface: a first-principles study 期刊论文  OAI收割 journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 2011, 卷号: 23, 23, 期号: 26, 页码: art. no. 265001, Art. No. 265001 作者:  Li C;  Wang F;  Sun Q;  Jia Y   |  收藏  |  浏览/下载：89/7  |  提交时间：2011/07/07 SCANNING-TUNNELING-MICROSCOPY  Scanning-tunneling-microscopy  Lead Monolayers  LEAD MONOLAYERS   Kinetic and relativistic effects on the surface alloy formation of submonolayer Au adsorbed on Si(111)-root 3 x root 3-Pb surface 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 21, 页码: 211912, 211912 作者:  Li C (Li Chong);  Wu FM (Wu Fengmin);  Li JB (Li Jingbo)   |  收藏  |  浏览/下载：9/0  |  提交时间：2012/02/22 The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文  OAI收割 chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui) 收藏  |  浏览/下载：129/35  |  提交时间：2010/03/08 GaN   Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2269-2272 Zhao, YM; Sun, GS; Ning, J; Liu, XF; Zhao, WS; Wang, L; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION   Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100 Lin, GQ; Zeng, YP; Wang, XL; Liu, HX 收藏  |  浏览/下载：18/0  |  提交时间：2010/03/08 RHEED  INTERLAYER  PRESSURE  NITRIDES  LAYERS  MBE   The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文  OAI收割 superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159 Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM 收藏  |  浏览/下载：82/1  |  提交时间：2010/03/08 gallium nitride crack  low temperature aluminum nitride  interlayer  silicon   Structural, photoluminescence, and field emission properties of vertically well-aligned ZnO nanorod arrays 期刊论文  OAI收割 journal of physical chemistry c, 2007, 卷号: 111, 期号: 34, 页码: 12566-12571 Li, C (Li, Chun); Fang, GJ (Fang, Guojia); Liu, NH (Liu, Nishuang); Li, J (Li, Jun); Liao, L (Liao, Lei); Su, FH (Su, Fuhai); Li, GH (Li, Guohua); Wu, XG (Wu, Xiaoguang); Zhao, XZ (Zhao, Xingzhong) 收藏  |  浏览/下载：109/0  |  提交时间：2010/03/29 OPTICAL-PROPERTIES