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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [31]
采集方式
OAI收割 [31]
内容类型
期刊论文 [30]
会议论文 [1]
发表日期
2016 [2]
2015 [3]
2014 [1]
2013 [1]
2011 [5]
2010 [3]
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学科主题
半导体物理 [31]
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Aqueous oxidation reaction enabled layer-by-layer corrosion of semiconductor nanoplates into single-crystalline 2D nanocrystals with single layer accuracy and ionic surface capping
期刊论文
OAI收割
chem commun (camb), 2016, 卷号: 52, 期号: 16, 页码: 3426-3429
Muwei Ji
;
Meng Xu
;
Jun Zhang
;
Jiajia Liu
;
Jiatao Zhang
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2017/03/16
Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets
期刊论文
OAI收割
nano letters, 2016, 卷号: 16, 期号: 2, 页码: 834-841
D. Pan
;
D. X. Fan
;
N. Kang
;
J. H. Zhi
;
X. Z. Yu
;
H. Q. Xu
;
J. H. Zhao
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2017/03/16
High-performance single crystalline UV photodetectors of β-Ga2O3
期刊论文
OAI收割
Journal of Alloys and Compounds, 2015, 卷号: 619, 页码: 572-575
Mianzeng Zhong
;
Zhongming Wei
;
Xiuqing Meng
;
Fengmin Wu
;
Jingbo Li
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2016/03/29
High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires
期刊论文
OAI收割
nano research, 2015, 卷号: 8, 期号: 7, 页码: 2162-2169
Zheng Lou
;
Ludong Li
;
Guozhen Shen
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2016/04/08
Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse
期刊论文
OAI收割
nanoscale, 2015, 卷号: 7, 期号: 11, 页码: 5046-5052
Xuming Xie
;
Guozhen Shen
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2016/03/29
Flexible photodetectors with single-crystalline GaTe nanowires
期刊论文
OAI收割
journal of materials chemistry c, JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2014, 卷号: 2, 2, 期号: 30, 页码: 6104-6110, 6104-6110
作者:
Yu, G
;
Liu, Z
;
Xie, XM
;
Ouyang, X
;
Shen, GZ
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2015/03/25
Single-crystalline metal germanate nanowire–carbon textiles as binder-free, self-supported anodes for high-performance lithium storage
期刊论文
OAI收割
Nanoscale, Nanoscale, 2013, 2013, 卷号: 5, 5, 期号: 21, 页码: 10291-10299, 10291-10299
作者:
Li W, Wang X, Liu B, Xu J, Liang B, Luo T, Luo S, Chen D, Shen G
  |  
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2014/03/26
The fabrication of TiO2 nanoparticle/ZnO nanowire arrays bi-filmed photoanode and their effect on dye-sensitized solar cells
期刊论文
OAI收割
journal of sol-gel science and technology, Journal of Sol-Gel Science and Technology, 2011, 2011, 页码: 1-7, 1-7
作者:
Wang, Meili
;
Wang, Yan
;
Li, Jingbo
;
Wang, M.(mlwang@semi.ac.cn)
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2012/06/14
Conversion efficiency
Efficiency
Nanowires
Open circuit voltage
Photoelectrochemical cells
Titanium dioxide
Zinc oxide
Conversion Efficiency
Efficiency
Nanowires
Open Circuit Voltage
Photoelectrochemical Cells
Titanium Dioxide
Zinc Oxide
Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
OAI收割
journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 2011, 卷号: 42, 42, 期号: 6, 页码: 1388-1391, 1388-1391
作者:
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
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收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
Raman Spectroscopy
Ultrathin Fe(3)o(4) Film
Crystal Orientation
Strain
Phonon Strain-shift Coefficient
Pulsed-laser Deposition
Thin-films
Spin-transport
Magnetite
Semiconductors
Spintronics
Scattering
Corrosion
Devices
Growth
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301
作者:
Wang, LG
;
Shen, C
;
Zheng, HZ
;
Zhu, H
;
Zhao, JH
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
charged acceptor centre
screening effect
exchange interaction
SHALLOW ACCEPTOR STATES
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Charged Acceptor Centre
Screening Effect
Exchange Interaction
Shallow Acceptor States
Gallium-arsenide
Semiconductors
Field