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Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体物理 [3]
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Controlling edge state transport in a HgTe topological insulator by superlattice effect 期刊论文  OAI收割
physical review b, Physical Review B, 2013, 2013, 卷号: 87, 87, 期号: 24, 页码: 5311, 5311
作者:  
L.-Z. Lin, F. Cheng, L. B. Zhang, D. Zhang, and Wen Yang
  |  收藏  |  浏览/下载:16/0  |  提交时间:2014/03/26
Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band structure 期刊论文  OAI收割
physical review b, PHYSICAL REVIEW B, 2011, 2011, 卷号: 83, 83, 期号: 8, 页码: article no.81402, Article no.81402
作者:  
Zhang LB;  Cheng F;  Zhai F;  Chang K;  Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
  |  收藏  |  浏览/下载:48/5  |  提交时间:2011/07/05
Quantum tunneling through planar p-n junctions in HgTe quantum wells 期刊论文  OAI收割
new journal of physics, NEW JOURNAL OF PHYSICS, 2010, 2010, 期号: 12, 页码: art. no. 083058, Art. No. 083058
作者:  
Zhang LB (Zhang L. B.);  Chang K (Chang Kai);  Xie XC (Xie X. C.);  Buhmann H (Buhmann H.);  Molenkamp LW (Molenkamp L. W.)
  |  收藏  |  浏览/下载:144/5  |  提交时间:2010/09/20