中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
  • 半导体研究所 [6]
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发表日期
  • 1998 [6]
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Intraband absorption in the 8-12 mu m band from si-doped vertically aligned ingaas/gaas quantum-dot superlattice 期刊论文  iSwitch采集
Applied physics letters, 1998, 卷号: 73, 期号: 25, 页码: 3706-3708
作者:  
Zhuang, QD;  Li, JM;  Li, HX;  Zeng, YP;  Pan, L
收藏  |  浏览/下载:10/0  |  提交时间:2019/05/12
Growth and transport properties of inas thin films on gaas 期刊论文  iSwitch采集
Journal of crystal growth, 1998, 卷号: 191, 期号: 3, 页码: 361-364
作者:  
Zhou, HW;  Zeng, YP;  Wang, HM;  Dong, JR;  Zhu, ZP
收藏  |  浏览/下载:14/0  |  提交时间:2019/05/12
Growth and transport properties of InAs thin films on GaAs 期刊论文  OAI收割
journal of crystal growth, 1998, 卷号: 191, 期号: 3, 页码: 361-364
Zhou HW; Zeng YP; Wang HM; Dong JR; Zhu ZP; Pan L; Kong MY
收藏  |  浏览/下载:25/0  |  提交时间:2010/08/12
Normally incident infrared absorption in vertically aligned InGaAs/GaAs quantum dot superlattice 期刊论文  OAI收割
journal of infrared and millimeter waves, 1998, 卷号: 17, 期号: 6, 页码: 477-480
Zhuang QD; Li JM; Zeng YP; Pan L; Kong MY; Lin LY
收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文  OAI收割
symposium on electron microscopy of semiconducting materials and ulsi devices at the spring materials-research-society meeting, san francisco, ca, apr 15-16, 1998
Wang HM; Zeng YP; Pan L; Zhou HW; Zhu ZP; Kong MY
收藏  |  浏览/下载:17/0  |  提交时间:2010/10/29
Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice 期刊论文  OAI收割
applied physics letters, 1998, 卷号: 73, 期号: 25, 页码: 3706-3708
Zhuang QD; Li JM; Li HX; Zeng YP; Pan L; Chen YH; Kong MY; Lin LY
收藏  |  浏览/下载:25/0  |  提交时间:2010/08/12