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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [19]
采集方式
OAI收割 [19]
内容类型
期刊论文 [19]
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2013 [7]
2012 [5]
2008 [1]
2006 [1]
2005 [2]
2004 [2]
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学科主题
半导体器件 [19]
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High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current
期刊论文
OAI收割
journal of semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 114011
Zhen, Dong
;
Cuiluan, Wang
;
Hongqi, Jing
;
Suping, Liu
;
Xiaoyu, Ma
收藏
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浏览/下载:18/0
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提交时间:2014/04/30
Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2013, 2013, 卷号: 102, 102, 期号: 1, 页码: 011105, 011105
作者:
Li, Hongjian
;
Kang, Junjie
;
Li, Panpan
;
Ma, Jun
;
Wang, Hui
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2013/10/08
Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization
期刊论文
OAI收割
applied physics express, Applied Physics Express, 2013, 2013, 卷号: 6, 6, 期号: 9, 页码: 092101, 092101
作者:
Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang
  |  
收藏
  |  
浏览/下载:12/0
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提交时间:2014/04/09
Analysis of laser atmospheric propagation characteristic and optimization of laser rangefinder
期刊论文
OAI收割
proceedings of spie - the international society for optical engineering, Proceedings of SPIE - The International Society for Optical Engineering, 2013, 2013, 卷号: 8907, 8907, 页码: 890737, 890737
作者:
Wen-ting Wang
;
Ying-ying Yang
;
Wei-fang Zhao
;
Xiao-jing Yi
;
Jun-wen Ji
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2014/05/16
The design and fabrication of a GaN-based monolithic light-emitting diode array
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2013, 2013, 卷号: 34, 34, 期号: 9, 页码: 094010, 094010
作者:
Zhan, Teng
;
Zhang, Yang
;
Li, Jing
;
Ma, Jun
;
Liu, Zhiqiang
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收藏
  |  
浏览/下载:14/0
  |  
提交时间:2014/04/28
Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs
期刊论文
OAI收割
ieee photonics technology letters, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 2013, 卷号: 25, 25, 期号: 9, 页码: 844-847, 844-847
作者:
Zhan, Teng
;
Zhang, Yang
;
Ma, Jun
;
Tian, Ting
;
Li, Jing
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2013/08/27
Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
期刊论文
OAI收割
applied physics express, APPLIED PHYSICS EXPRESS, 2013, 2013, 卷号: 6, 6, 期号: 5, 页码: 052102, 052102
作者:
Li, Hongjian
;
Li, Panpan
;
Kang, Junjie
;
Li, Zhi
;
Zhang, Yiyun
  |  
收藏
  |  
浏览/下载:13/0
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提交时间:2013/08/27
Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles
期刊论文
OAI收割
ecs solid state letters, ECS SOLID STATE LETTERS, 2012, 2012, 卷号: 1, 1, 期号: 2, 页码: r5-r8, R5-R8
作者:
Tian, Ting
;
Zhang, Yiyun
;
Yi, Xiaoyan
;
Liu, Zhiqiang
;
Li, Jing
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2013/10/10
Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2012, 2012, 卷号: 33, 33, 期号: 5, 页码: 054009, 054009
作者:
Zheng, Huaiwen
;
Zhang, Yiyun
;
Yang, Hua
;
Xue, Bin
;
Wu, Kui
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收藏
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浏览/下载:19/0
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提交时间:2013/05/13
Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2012, 2012, 卷号: 33, 33, 期号: 10, 页码: 104002, 104002
作者:
Li, Panpan
;
Li, Hongjian
;
Zhang, Yiyun
;
Li, Zhicong
;
Liang, Meng
  |  
收藏
  |  
浏览/下载:14/0
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提交时间:2013/05/07