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High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current 期刊论文  OAI收割
journal of semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 114011
Zhen, Dong; Cuiluan, Wang; Hongqi, Jing; Suping, Liu; Xiaoyu, Ma
收藏  |  浏览/下载:18/0  |  提交时间:2014/04/30
Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2013, 2013, 卷号: 102, 102, 期号: 1, 页码: 011105, 011105
作者:  
Li, Hongjian;  Kang, Junjie;  Li, Panpan;  Ma, Jun;  Wang, Hui
  |  收藏  |  浏览/下载:11/0  |  提交时间:2013/10/08
Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization 期刊论文  OAI收割
applied physics express, Applied Physics Express, 2013, 2013, 卷号: 6, 6, 期号: 9, 页码: 092101, 092101
作者:  
Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang
  |  收藏  |  浏览/下载:12/0  |  提交时间:2014/04/09
Analysis of laser atmospheric propagation characteristic and optimization of laser rangefinder 期刊论文  OAI收割
proceedings of spie - the international society for optical engineering, Proceedings of SPIE - The International Society for Optical Engineering, 2013, 2013, 卷号: 8907, 8907, 页码: 890737, 890737
作者:  
Wen-ting Wang;  Ying-ying Yang;  Wei-fang Zhao;  Xiao-jing Yi;  Jun-wen Ji
  |  收藏  |  浏览/下载:24/0  |  提交时间:2014/05/16
The design and fabrication of a GaN-based monolithic light-emitting diode array 期刊论文  OAI收割
journal of semiconductors, Journal of Semiconductors, 2013, 2013, 卷号: 34, 34, 期号: 9, 页码: 094010, 094010
作者:  
Zhan, Teng;  Zhang, Yang;  Li, Jing;  Ma, Jun;  Liu, Zhiqiang
  |  收藏  |  浏览/下载:14/0  |  提交时间:2014/04/28
Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs 期刊论文  OAI收割
ieee photonics technology letters, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 2013, 卷号: 25, 25, 期号: 9, 页码: 844-847, 844-847
作者:  
Zhan, Teng;  Zhang, Yang;  Ma, Jun;  Tian, Ting;  Li, Jing
  |  收藏  |  浏览/下载:7/0  |  提交时间:2013/08/27
Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well 期刊论文  OAI收割
applied physics express, APPLIED PHYSICS EXPRESS, 2013, 2013, 卷号: 6, 6, 期号: 5, 页码: 052102, 052102
作者:  
Li, Hongjian;  Li, Panpan;  Kang, Junjie;  Li, Zhi;  Zhang, Yiyun
  |  收藏  |  浏览/下载:13/0  |  提交时间:2013/08/27
Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles 期刊论文  OAI收割
ecs solid state letters, ECS SOLID STATE LETTERS, 2012, 2012, 卷号: 1, 1, 期号: 2, 页码: r5-r8, R5-R8
作者:  
Tian, Ting;  Zhang, Yiyun;  Yi, Xiaoyan;  Liu, Zhiqiang;  Li, Jing
  |  收藏  |  浏览/下载:9/0  |  提交时间:2013/10/10
Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters 期刊论文  OAI收割
journal of semiconductors, Journal of Semiconductors, 2012, 2012, 卷号: 33, 33, 期号: 5, 页码: 054009, 054009
作者:  
Zheng, Huaiwen;  Zhang, Yiyun;  Yang, Hua;  Xue, Bin;  Wu, Kui
  |  收藏  |  浏览/下载:19/0  |  提交时间:2013/05/13
Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer 期刊论文  OAI收割
journal of semiconductors, Journal of Semiconductors, 2012, 2012, 卷号: 33, 33, 期号: 10, 页码: 104002, 104002
作者:  
Li, Panpan;  Li, Hongjian;  Zhang, Yiyun;  Li, Zhicong;  Liang, Meng
  |  收藏  |  浏览/下载:14/0  |  提交时间:2013/05/07