机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2017 [1]
• 2016 [2]
• 2013 [4]
• 2012 [4]
• 2004 [2]
• 2002 [1]
• 更多

学科主题

• 半导体器件 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-locking 期刊论文  OAI收割 Semiconductor Science and Technology, 2017, 卷号: 32, 期号: 2017, 页码: 025013 (6pp) 作者:  Wei-fang Zhao;  Hua Yu;  Meng-zhou Liao;  Ling Zhang;  Shu-zhen Zou   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/11/30 Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics 期刊论文  OAI收割 journal of semiconductors, 2016, 卷号: 36, 期号: 10, 页码: 102006 Jing Hongqi; Zhong Li; Ni Yuxi; Zhang Junjie; Liu Suping; Ma Xiaoyu 收藏  |  浏览/下载：14/0  |  提交时间：2017/03/16 Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics 期刊论文  OAI收割 journal of semiconductors, 2016, 卷号: 36, 期号: 10, 页码: 102006 Jing Hongqi; Zhong Li; Ni Yuxi; Zhang Junjie; Liu Suping; Ma Xiaoyu 收藏  |  浏览/下载：16/0  |  提交时间：2017/03/16 Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization 期刊论文  OAI收割 applied physics express, Applied Physics Express, 2013, 2013, 卷号: 6, 6, 期号: 9, 页码: 092101, 092101 作者:  Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang   |  收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09 The design and fabrication of a GaN-based monolithic light-emitting diode array 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2013, 2013, 卷号: 34, 34, 期号: 9, 页码: 094010, 094010 作者:  Zhan, Teng;  Zhang, Yang;  Li, Jing;  Ma, Jun;  Liu, Zhiqiang   |  收藏  |  浏览/下载：14/0  |  提交时间：2014/04/28 Characteristics of GaN-Based High-Voltage LEDs Compared to Traditional High Power LEDs 期刊论文  OAI收割 ieee photonics technology letters, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 2013, 卷号: 25, 25, 期号: 9, 页码: 844-847, 844-847 作者:  Zhan, Teng;  Zhang, Yang;  Ma, Jun;  Tian, Ting;  Li, Jing   |  收藏  |  浏览/下载：8/0  |  提交时间：2013/08/27 Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well 期刊论文  OAI收割 applied physics express, APPLIED PHYSICS EXPRESS, 2013, 2013, 卷号: 6, 6, 期号: 5, 页码: 052102, 052102 作者:  Li, Hongjian;  Li, Panpan;  Kang, Junjie;  Li, Zhi;  Zhang, Yiyun   |  收藏  |  浏览/下载：13/0  |  提交时间：2013/08/27 Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles 期刊论文  OAI收割 ecs solid state letters, ECS SOLID STATE LETTERS, 2012, 2012, 卷号: 1, 1, 期号: 2, 页码: r5-r8, R5-R8 作者:  Tian, Ting;  Zhang, Yiyun;  Yi, Xiaoyan;  Liu, Zhiqiang;  Li, Jing   |  收藏  |  浏览/下载：10/0  |  提交时间：2013/10/10 Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2012, 2012, 卷号: 33, 33, 期号: 5, 页码: 054009, 054009 作者:  Zheng, Huaiwen;  Zhang, Yiyun;  Yang, Hua;  Xue, Bin;  Wu, Kui   |  收藏  |  浏览/下载：19/0  |  提交时间：2013/05/13 Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2012, 2012, 卷号: 33, 33, 期号: 10, 页码: 104002, 104002 作者:  Li, Panpan;  Li, Hongjian;  Zhang, Yiyun;  Li, Zhicong;  Liang, Meng   |  收藏  |  浏览/下载：14/0  |  提交时间：2013/05/07