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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [21]
采集方式
OAI收割 [21]
内容类型
期刊论文 [21]
发表日期
2022 [1]
2020 [1]
2018 [1]
2017 [2]
2016 [4]
2015 [5]
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学科主题
Physics [3]
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专题:新疆理化技术研究所
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Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter
期刊论文
OAI收割
NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9
作者:
Wu, P (Wu, Ping) [1] , [2]
;
Wen, L (Wen, Lin) [3] , [4]
;
Xu, ZQ (Xu, Zhi-Qian) [1] , [2]
;
Jiang, YS (Jiang, Yun-Sheng) [1] , [2]
;
Guo, Q (Guo, Qi) [3] , [4]
  |  
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2022/04/07
Integrated circuit
Totalionizingdose
Electromagneticradiation
Synergistic effect
Combined environment
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
作者:
Zheng, QW (Zheng, Qi-Wen)
;
Cui, JW (Cui, Jiang-Wei)
;
Wei, Y (Wei, Ying)
;
Yu, XF (Yu, Xue-Feng)
;
Lu, W (Lu, Wu)
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2018/05/07
A novel computational model based on super-disease and miRNA for potential miRNA-disease association prediction
期刊论文
OAI收割
MOLECULAR BIOSYSTEMS, 2017, 卷号: 13, 期号: 6, 页码: 1202-1212
作者:
Chen, X (Chen, Xing)
;
Jiang, ZC (Jiang, Zhi-Chao)
;
Xie, D (Xie, Di)
;
Huang, DS (Huang, De-Shuang)
;
Zhao, Q (Zhao, Qi)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2017/08/02
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
作者:
Ma, T (Ma, Teng)
;
Zheng, QW (Zheng, Qi-Wen)
;
Cui, JW (Cui, Jiang-Wei)
;
Zhou, H (Zhou, Hang)
;
Su, DD (Su, Dan-Dan)
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2017/12/14
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
作者:
Zheng, QW (Zheng Qi-Wen)
;
Cui, JW (Cui Jiang-Wei)
;
Wang, HN (Wang Han-Ning)
;
Zhou, H (Zhou Hang)
;
Yu, DZ (Yu De-Zhao)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2016/12/12
total ionizing dose effects
deep sub-micron
metal oxide semiconductor field effect transistor
static random access memory
Total ionizing dose effects of domestic SiGe HBTs under different dose rates
期刊论文
OAI收割
CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3
作者:
Liu, MH (Liu, Mo-Han)
;
Lu, W (Lu, Wu)
;
Ma, WY (Ma, Wu-Ying)
;
Wang, X (Wang, Xin)
;
Guo, Q (Guo, Qi)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2016/12/12
SiGe HBTs
TID
ELDRS
annealing
Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 7
作者:
Zheng, QW (Zheng, Qi-Wen)
;
Cui, JW (Cui, Jiang-Wei)
;
Zhou, H (Zhou, Hang)
;
Yu, DZ (Yu, De-Zhao)
;
Yu, XF (Yu, Xue-Feng)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2016/12/07
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
作者:
Zhou, H (Zhou Hang)
;
Zheng, QW (Zheng Qi-Wen)
;
Cui, JW (Cui Jiang-Wei)
;
Yu, XF (Yu Xue-Feng)
;
Guo, Q (Guo Qi)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2016/12/12
silicon-on-insulator
ionizing radiation
hot carriers
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
作者:
Zhou, H (Zhou Hang)
;
Cui, JW (Cui Jiang-Wei)
;
Zheng, QW (Zheng Qi-Wen)
;
Guo, Q (Guo Qi)
;
Ren, DY (Ren Di-Yuan)
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2018/01/26
Reliability
Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor
Total Ionizing Dose Effect
Electrical Stress