中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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发表日期
  • 2015 [4]
学科主题
  • 光电子学 [4]
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Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文  OAI收割
journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:13/0  |  提交时间:2016/03/23
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文  OAI收割
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:14/0  |  提交时间:2016/03/23
Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文  OAI收割
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏  |  浏览/下载:19/0  |  提交时间:2016/03/23
The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文  OAI收割
superlattices and microstructures, 2015, 卷号: 88, 页码: 50-55
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; X. Li; F. Liang; J.P. Liu; S.M. Zhang; H. Yang; Y.T. Zhang; G.T. Du
收藏  |  浏览/下载:20/0  |  提交时间:2016/03/23