机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 会议论文 [10]

发表日期

• 2011 [1]
• 2010 [1]
• 2008 [2]
• 2006 [3]
• 2004 [3]

学科主题

• 半导体材料 [10]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：会议论文    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文  OAI收割 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：47/0  |  提交时间：2011/07/26 Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文  OAI收割 3rd ieee international nanoelectronics conference, hong kong, peoples r china, jan 03-08, 2010 Jin P (Jin P.); Lv XQ (Lv X. Q.); Liu N (Liu N.); Zhang ZY (Zhang Z. Y.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：33/0  |  提交时间：2010/11/01 SUPERLUMINESCENT DIODES   Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Xu B;  Jin P 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09 INAS   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文  OAI收割 15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005 作者:  Jin P 收藏  |  浏览/下载：159/26  |  提交时间：2010/03/29 quantum dots   Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 作者:  Ye XL;  Jin P;  Xu B 收藏  |  浏览/下载：119/42  |  提交时间：2010/03/29 lateral intersubband photocurrent   Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Jin P;  Xu B 收藏  |  浏览/下载：127/16  |  提交时间：2010/03/29 QUANTUM DOTS   Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：92/22  |  提交时间：2010/03/29 DOTS   Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：82/12  |  提交时间：2010/03/29 1.3 MU-M