机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [9]

发表日期

• 2020 [1]
• 2018 [1]
• 2017 [4]
• 2016 [2]
• 2015 [1]

学科主题

• 半导体物理 [6]
• 半导体材料 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Clarifying the effect of local structure of Ce3+ and Eu3+ on photoluminescence of YAG:Ce,Eu nanophosphors 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 822, 页码: 153671 作者:  Xiaowu He;  Yanbiao Ren;  Caixia Hu;  Ben Ma;  Hao Chen;  Shushan Huang;  Hongyue Hao;  Tongtong Qi;  Xiaofang Liu;  Ronghai Yu   |  收藏  |  浏览/下载：21/0  |  提交时间：2021/06/22 Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL) 期刊论文  OAI收割 Infrared Physics & Technology, 2018, 卷号: 89, 页码: 147-153 作者:  Chunyan Guo ;   Yaoyao Sun ;   Zhe Jia ;   Zhi Jiang ;   Yuexi Lv ;   Hongyue Hao ;   Xi Han ;   Yinan Dong ;   Dongwei Jiang ;   Guowei Wang ;   Yingqiang Xu ;   Tao Wang ;   Jinshou Tian ;   Zhaoxin Wu ;   Zhichuan Niu   |  收藏  |  浏览/下载：30/0  |  提交时间：2019/11/12 Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices 期刊论文  OAI收割 Appl. Phys. Lett., 2017, 卷号: 111, 页码: 161101 作者:  Dongwei Jiang;  Xi Han;  Hongyue Hao;  Yaoyao Sun;  Zhi Jiang 收藏  |  浏览/下载：51/0  |  提交时间：2018/06/15 320 _ 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice 期刊论文  OAI收割 Infrared Physics & Technology, 2017, 卷号: 82, 页码: 140–143 作者:  Sun Yaoyao;  Han Xi;  Hao Hongyue;  Jiang Dongwei;  Guo Chunyan 收藏  |  浏览/下载：33/0  |  提交时间：2018/06/15 Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice 期刊论文  OAI收割 Infrared Physics & Technology, 2017, 卷号: 89, 页码: 35–40 作者:  Xi Han;  Dongwei Jiang;  Guowei Wang;  Hongyue Hao;  Yaoyao Sun 收藏  |  浏览/下载：33/0  |  提交时间：2018/06/15 320 _ 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice 期刊论文  OAI收割 Superlattices and Microstructures, 2017, 卷号: 111, 页码: 783-788 作者:  Yaoyao Sun;  GuoweiWang;  Xi Han;  Wei Xiang;  Dongwei Jiang 收藏  |  浏览/下载：27/0  |  提交时间：2018/06/15 Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm 期刊论文  OAI收割 applied physics letters, 2016, 卷号: 108, 期号: 12, 页码: 121110 Dongwei Jiang; Wei Xiang; Fengyun Guo; Hongyue Hao; Xi Han; Xiaochao Li; Guowei Wang; Yingqiang Xu; Qingjiang Yu; Zhichuan Niu 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文  OAI收割 journal of crystal growth, 2016, 卷号: 443, 页码: 85-89 Wei Xiang; Guowei Wang; Hongyue Hao; Yongping Liao; Xi Han; Lichun Zhang; Yingqiang Xu; Zhengwei Ren; Haiqiao Ni; Zhenhong He; Zhichuan Niu 收藏  |  浏览/下载：35/0  |  提交时间：2017/03/16 Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice 期刊论文  OAI收割 applied physics letters, 2015, 卷号: 106, 页码: 192402 Yuan Li; Yu Liu; Laipan Zhu; Xudong Qin; Qing Wu; Wei Huang; Zhichuan Niu; Wei Xiang; Hongyue Hao; Yonghai Chen 收藏  |  浏览/下载：9/0  |  提交时间：2016/03/23