中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • Physics, M... [4]
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Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 11, 页码: 116802-116802
Liu, XY; Liu, WL; Ma, XB; Chen, C; Song, ZT; Lin, CL
收藏  |  浏览/下载:15/0  |  提交时间:2012/03/24
Investigation of SOI substrates incorporated with buried MOSi2 for high frequency SiGeHBTs 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 1, 页码: 227-229
Chen, C; Liu, WL; Ma, XB; Shen, QW; Song, ZT; Lin, CL
收藏  |  浏览/下载:11/0  |  提交时间:2012/03/24
Fabrication of silicon-on-insulator-multilayer structure by epitaxial layer transfer 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 1, 页码: 207-210
Xie, XY; Lin, Q; Men, CL; Liu, WL; Xu, AH; Lin, CL
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
Silicon-on-insulator structure fabricated by electron beam evaporation of Si on porous Si and epitaxial layer transfer 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 5, 页码: 662-664
Liu, WL; Duo, XZ; Wang, LW; Zhang, M; Shen, QW; Lin, CL; Chu, PK
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/24