机构

• 半导体研究所 [20]

采集方式

• OAI收割 [20]

内容类型

• 期刊论文 [13]
• 会议论文 [7]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2008 [1]
• 2006 [1]
• 2005 [1]
• 更多

学科主题

• 半导体材料 [20]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 FUNDAMENTAL-BAND GAP  INDIUM NITRIDE  BUFFER LAYER  DEPENDENCE  SAPPHIRE  MOCVD   Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文  OAI收割 applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143 Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28 BAND-GAP  TEMPERATURE-DEPENDENCE  ENERGY  SEMICONDUCTORS  SPECTRA  EPITAXY  GROWTH  LAYERS   Growth behavior of AlInGaN films 期刊论文  OAI收割 journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：216/66  |  提交时间：2010/03/08 Scanning electron microscope  Strain  X-ray diffraction  AlInGaN   The growth temperatures dependence of optical and electrical properties of InN films 期刊论文  OAI收割 science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242 Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG 收藏  |  浏览/下载：47/2  |  提交时间：2010/03/08 metalorganic chemical vapor deposition  X-ray diffraction  photoluminescence   Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals 期刊论文  OAI收割 microgravity science and technology, 2006, 卷号: 17, 期号: 1, 页码: 40244 Zhou YF; Pan ZL; Liu Y; Ai F; Chen NF; Huang YY; He W; Tang LA; Wang JC 收藏  |  浏览/下载：269/40  |  提交时间：2010/04/11 Comment on 期刊论文  OAI收割 applied physics letters, 2005, 卷号: 87, 期号: 17, 页码: art.no.176101 Liu B; Zhang R; Xie ZL; Xiu XQ; Bi ZX; Gu SL; Shi Y; Zheng YD; Hu LJ; Chen YH; Wang ZG 收藏  |  浏览/下载：123/32  |  提交时间：2010/03/17 Silicon-on-insulating multi-layers for total-dose irradiation hardness 期刊论文  OAI收割 chinese physics letters, 2004, 卷号: 21, 期号: 8, 页码: 1600-1603 Zhang EX; Yi WB; Liu XH; Chen M; Liu ZL; Xi W 收藏  |  浏览/下载：379/54  |  提交时间：2010/03/09 IMPLANTATION   Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文  OAI收割 semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573 Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X 收藏  |  浏览/下载：179/57  |  提交时间：2010/03/09 LAYERS   Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文  OAI收割 10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002 Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 PIEZOELECTRIC FIELD  PHOTOLUMINESCENCE  TEMPERATURE   Nano-layer structure of silicon-on-insulator materials 会议论文  OAI收割 11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002 Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 SOI  nanostructure  microelectronic materials