中国科学院机构知识库网格系统: 检索

Status of the SHINE Control System 会议论文 OAI收割
New York, 2019
作者: Y.B. Yan; G.H. Chen; J.F. Chen; J.G. Ding; Y.B. Leng

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收藏 | 浏览/下载：21/0 | 提交时间：2021/05/28

Application of Riblets on Turbine Blade End-Wall Secondary Flow Control 会议论文 OAI收割
ASME, 2014
X. Miao; Q. Zhang; H. Jiang; H. Qi

收藏 | 浏览/下载：10/0 | 提交时间：2015/01/07

Green, cubic Y2O3: Tb3+ nanospheres: Synthesis and photoluminescence property 会议论文 OAI收割
nanotechnology 2014: graphene, cnts, particles, films and composites - 2014 nsti nanotechnology conference and expo, nsti-nanotech 2014, washington, dc, united states, 2014-06-15
Miao, H.; Hu, X.; Sun, X.; Wang, Z.; Sun, Q.; Wu, H.; Zhang, D.; Bai, J.; Hou, X.

收藏 | 浏览/下载：22/0 | 提交时间：2015/03/31

Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文 OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者: Zhang T.

收藏 | 浏览/下载：36/0 | 提交时间：2014/05/15

Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者: Zhang T.

收藏 | 浏览/下载：20/0 | 提交时间：2013/03/25

InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn TMGa AsH3 and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power their temperatures were detected by a thermocouple and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm In0.82Ga0.18As absorption layer with the thickness of 2.8 m and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied the curves of the I-V characteristics the range of response spectrum and the detectivity (D*) were obtained. (2013) Trans Tech Publications Switzerland.

InGaAs nanoflowers grown by MOCVD (EI CONFERENCE) 会议论文 OAI收割
2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012, Xi'an, China
作者: Zhang T.

收藏 | 浏览/下载：13/0 | 提交时间：2013/03/25

InGaAs nanoflowers have been prepared on InP substrates by MOCVD using TMIn TMGa and AsH3 as reactive precursors at 420 C. Through observation by scanning electron microscopy we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As. (2012) Trans Tech Publications Switzerland.

Origin and development of Artemisia (Asteraceae) in Asia and its implications for the uplift history of the Tibetan Plateau: A review (CPCI-S) 会议论文 OAI收割
Miao Y. F.; Meng Q. Q.; Fang X. M.; Yan X. L.; Wu F. L.; Song C. H.

收藏 | 浏览/下载：19/0 | 提交时间：2013/03/07

Influence of spacial temperature distribution on high accuracy interferometric metrology 会议论文 OAI收割
2010
作者: Yan F.; Yan F.

收藏 | 浏览/下载：6/0 | 提交时间：2013/03/28

Temperature gradients effect on surface test with high precise interferometer 会议论文 OAI收割
2010
Miao E. L.; Gu Y. Q.; Zhang J. A.; Sui Y. X.; Yang H. J.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/28

Influence of spatial temperature distribution on high accuracy interferometric metrology (EI CONFERENCE) 会议论文 OAI收割
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, April 26, 2010 - April 29, 2010, Dalian, China
作者: Yang H.; Zhang J.; Zhang J.; Zhang J.; Yan F.

收藏 | 浏览/下载：19/0 | 提交时间：2013/03/25

We calculate the influence of temperature change on the refractive index of air establish a model of air temperature distribution and analyze the effect of different temperature distribution on the high accuracy interferometric metrology. First a revised Edlen formula is employed to acquire the relation between temperature and refractive index of air followed by introducing the fixed temperature gradient distribution among the spatial grid within the optical cavity between the reference flat and the test flat of the Fizeau interferometer accompanied by a temperature change random function within each grid. Finally all the rays through the air layer with different incident angles are traced by Matlab program in order to obtain the final output position angle and OPD for each ray. The influence of different temperature distribution and the length of the optical cavity in on the testing accuracy can be analyzed through the RMS value that results from repeatable rays tracing. As a result the horizontal distribution (vertical to optical axis) has a large effect on the testing accuracy. Thus to realize the high accuracy figure metrology the horizontal distribution of temperature must be rigorously controlled as well as to shorten the length of the optical cavity to a large extent. The results from our simulation are of great significant for the accuracy analysis of interferometric testing and the research of manufacturing a interferometer. 2010 Copyright SPIE - The International Society for Optical Engineering.