机构

• 新疆理化技术研究所 [73]

采集方式

• OAI收割 [73]

内容类型

• 期刊论文 [72]
• 会议论文 [1]

发表日期

• 2022 [3]
• 2021 [8]
• 2020 [9]
• 2019 [7]
• 2018 [18]
• 2017 [10]
• 更多

学科主题

• Physics [1]

筛选

浏览/检索结果: 共73条，第1-10条 帮助 限定条件 专题：新疆理化技术研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9 作者:  Wu, P (Wu, Ping) [1] , [2];  Wen, L (Wen, Lin) [3] , [4];  Xu, ZQ (Xu, Zhi-Qian) [1] , [2];  Jiang, YS (Jiang, Yun-Sheng) [1] , [2];  Guo, Q (Guo, Qi) [3] , [4]   |  收藏  |  浏览/下载：46/0  |  提交时间：2022/04/07 Integrated circuit  Totalionizingdose  Electromagneticradiation  Synergistic effect  Combined environment   1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214 作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]   |  收藏  |  浏览/下载：23/0  |  提交时间：2022/04/07 Total ionizing dose irradiation  UTBB FD-SOI  1  f noise   Single event transient effect of frontside and backside illumination image sensors under proton irradiation 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9 作者:  Fu, J (Fu Jing) [1] , [2] , [3];  Cai, YL (Cai Yu-Long) [4];  Li, YD (Li Yu-Dong) [1] , [2];  Feng, J (Feng Jie) [1] , [2];  Wen, L (Wen Lin) [1] , [2]   |  收藏  |  浏览/下载：26/0  |  提交时间：2022/06/06 CMOS image sensor  proton irradiation  single event effect  transientbrightspot   Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors 期刊论文  OAI收割 CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184 作者:  Liu, BK (Liu Bingkai)[ 1,2,3 ];  Li, YD (Li Yudong)[ 1,2 ];  Wen, L (Wen Lin)[ 1,2 ];  Zhou, D (Zhou Dong)[ 1,2 ];  Feng, J (Feng Jie)[ 1,2 ]   |  收藏  |  浏览/下载：20/0  |  提交时间：2021/05/10 Backside‐  illuminated CMOS image sensors  Dark signal behaviors  Displacement damage effects  Neutron irradiation   Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors 期刊论文  OAI收割 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761 作者:  Feng, J (Feng, Jie) [1] , [2];  Fu, J (Fu, Jing) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2];  Wen, L (Wen, Lin) [1] , [2];  Guo, Q (Guo, Qi) [1] , [2]   |  收藏  |  浏览/下载：9/0  |  提交时间：2022/03/24 CMOS Color Image Sensor  Ionization Damage  Radiation-Sensitive Parameters   Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文  OAI收割 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429 作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]   |  收藏  |  浏览/下载：27/0  |  提交时间：2022/03/24 SiC Power MOSFETs  Switching Characteristics  Total Ionizing Dose (TID) Effect  Static Characteristic  Parasitic Capacitance   Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1   |  收藏  |  浏览/下载：22/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier 期刊论文  OAI收割 AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6 作者:  Xiang, CAF (Xiang, Chuanfeng) 1 , 2   |  收藏  |  浏览/下载：50/0  |  提交时间：2021/08/06 Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal 期刊论文  OAI收割 RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5 作者:  Li, YD (Li, Yudong);  Liu, BK (Liu, Bingkai);  Wen, L (Wen, Lin);  Wei, Y (Wei, Ying);  Zhou, D (Zhou, Dong)   |  收藏  |  浏览/下载：26/0  |  提交时间：2021/10/14 Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |  浏览/下载：29/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)