中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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新疆理化技术研究所 [46]
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Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices
期刊论文
OAI收割
FRONTIERS IN MATERIALS, 2022, 卷号: 9
作者:
Lu, Guangbao
;
Liu, Jun
;
Zheng, Qirong
;
Li, Yonggang
  |  
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2022/12/23
total ionizing dose effect
dynamic modeling
doubly-hydrogenated oxygen vacancy
microscopic mechanism
MOS devices
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
期刊论文
OAI收割
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:
Yang, GG (Yang, Guangan)[ 1 ]
;
Wu, WR (Wu, Wangran)[ 1 ]
;
Zhang, XY (Zhang, Xingyao)[ 2 ]
;
Tang, PY (Tang, Pengyu)[ 1 ]
;
Yang, J (Yang, Jing)[ 1 ]
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/03/15
SOI-LIGBT
Total-ionizing-dose
Radiation
Degradation
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier
期刊论文
OAI收割
AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6
作者:
Xiang, CAF (Xiang, Chuanfeng) 1 , 2
;
Yao, S (Yao, Shuai) 1 , 3
;
Lu, W (Lu, Wu) 1 , 2
;
Li, XL (Li, Xiaolong) 1
;
Yu, X (Yu, Xin) 1
  |  
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2021/08/06
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal
期刊论文
OAI收割
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:
Li, YD (Li, Yudong)
;
Liu, BK (Liu, Bingkai)
;
Wen, L (Wen, Lin)
;
Wei, Y (Wei, Ying)
;
Zhou, D (Zhou, Dong)
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/10/14
Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:
Ren, ZX (Ren, Zhexuan)
;
1An, X (An, Xia) 1
;
Li, GS (Li, Gensong) 1
;
Liu, JY (Liu, Jingyi) 1
;
Xun, MZ (Xun, Mingzhu) 2
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/09/22
65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)
Altered Response to Total Body Irradiation of C57BL/6-Tg (CAG-EGFP) Mice
期刊论文
OAI收割
DOSE-RESPONSE, 2020, 卷号: 18, 期号: 3, 页码: 11
作者:
Liu, Cuihua
;
Tanaka, Kaoru
;
Katsube, Takanori
;
Vares, Guillaume
;
Maruyama, Kouichi
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2021/12/15
green fluorescent protein
apoptosis
bone marrow death
adaptive response
ionizing radiation
GFP transgenic mice
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Yu, XF (Yu, Xuefeng)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2020/12/11
SiC MOSFET
total ionizing dose irradiation
time-dependent dielectric breakdown
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted