机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [4]

发表日期

• 2010 [3]
• 2009 [1]

学科主题

• 半导体物理 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires 期刊论文  OAI收割 chemphyschem, CHEMPHYSCHEM, 2010, 2010, 卷号: 11, 11, 期号: 15, 页码: 3329-3332, 3329-3332 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：24/0  |  提交时间：2010/12/05 SILICON NANOWIRES  Silicon Nanowires  Catalytic Growth  Band Offsets  Solar-cells  Semiconductors  Superlattices  Efficiency  CATALYTIC GROWTH  BAND OFFSETS  SOLAR-CELLS  SEMICONDUCTORS  SUPERLATTICES  EFFICIENCY   Defects in gallium nitride nanowires: First principles calculations 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：105/1  |  提交时间：2010/10/11 CHEMICAL-VAPOR-DEPOSITION  Chemical-vapor-deposition  Gan Nanowires  Native Defects  Complexes  Epitaxy  Growth  Arrays  GAN NANOWIRES  NATIVE DEFECTS  COMPLEXES  EPITAXY  GROWTH  ARRAYS   Codoping of magnesium with oxygen in gallium nitride nanowires 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 96, 96, 期号: 10, 页码: art. no. 103112, Art. No. 103112 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail Address: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：30/3  |  提交时间：2010/04/13 MOLECULAR-BEAM EPITAXY  Molecular-beam Epitaxy   Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084305 Wang ZG (Wang Zhiguo); Gao F (Gao Fei); Li JB (Li Jingbo); Zu XT (Zu Xiaotao); Weber WJ (Weber William J.) 收藏  |  浏览/下载：151/16  |  提交时间：2010/03/08 BETA-SIC NANORODS