机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2015 [1]
• 2013 [3]
• 2010 [2]

学科主题

• 半导体材料 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文  OAI收割 chin. phys. lett., 2015, 卷号: 32, 期号: 12, 页码: 127301 Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun 收藏  |  浏览/下载：31/0  |  提交时间：2016/03/29 The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy 期刊论文  OAI收割 chinese physics letters, 2013, 卷号: 30, 期号: 5, 页码: 7101 WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Growth and optical properties of InGaN/GaN dual-wavelength light-emitting diodes 期刊论文  OAI收割 acta photonica sinica, 2013, 卷号: 42, 期号: 10, 页码: 1135-1139 Zhao, Ling-Hui; Zhang, Lian; Wang, Xiao-Dong; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping 收藏  |  浏览/下载：13/0  |  提交时间：2014/04/30 Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method 期刊论文  OAI收割 chinese physics letters, 2013, 卷号: 30, 期号: 8, 页码: 087804 ZHANG Shi-Zhu, YE Xiao-Ling, XU Bo, LIU Shu-Man, ZHOU Wen-Fei, WANG Zhan-Guo 收藏  |  浏览/下载：10/0  |  提交时间：2014/02/12 Design and Characterization of Evanescently Coupled Uni-Traveling Carrier Photodiodes with a Multimode Diluted Waveguide Structure 期刊论文  OAI收割 chinese physics letters, 27 (2): art. no. 028501 feb 2010, 2010, 卷号: 27, 期号: 2, 页码: art. no. 028501 Zhang YX (Zhang Yun-Xiao); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：194/47  |  提交时间：2010/04/13 I-N PHOTODIODE  HIGH RESPONSIVITY  HIGH-SPEED  OPTIMIZATION  FABRICATION   Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 074216 Zhang YX (Zhang Yun-Xiao); Liao ZY (Liao Zai-Yi); Zhao LJ (Zhao Ling-Juan); Pan JQ (Pan Jiao-Qing); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：256/39  |  提交时间：2010/08/17 electroabsorption modulator  intra-step quantum wells  uni-traveling-carrier RF-gain  WAVELENGTH CONVERSION  WAVE-GUIDE