机构

• 半导体研究所 [13]

采集方式

• OAI收割 [11]
• iSwitch采集 [2]

内容类型

• 期刊论文 [9]
• 会议论文 [4]

发表日期

• 2009 [1]
• 2007 [1]
• 2004 [2]
• 2003 [1]
• 2001 [6]
• 1999 [1]
• 更多

学科主题

• 半导体材料 [8]
• 半导体物理 [3]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903 Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/08 X-RAY-DIFFRACTION  MOLECULAR-BEAM-EPITAXY  FILMS  MISFIT   Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction 期刊论文  OAI收割 physica scripta, 2007, 卷号: t129, 页码: 27-30 Qiu, YX; Li, MC; Wang, YT; Zhang, BS; Wang, Y; Liu, GJ; Zhao, LC 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/08 FILMS   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 期刊论文  OAI收割 micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480 Luo, XH; Wang, RM; Zhang, XP; Zhang, HZ; Yu, DP; Luo, MC 收藏  |  浏览/下载：145/32  |  提交时间：2010/03/09 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文  OAI收割 international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003 Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC 收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文  OAI收割 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 POLYMORPHOUS SILICON  LIGHT-SCATTERING  THIN-FILMS  SI  MICROCRYSTALLINITY  ABSORPTION  STATES   Homoepitaxial growth and device characteristics of sic on si-face (0001) 6h-sic 期刊论文  iSwitch采集 Journal of crystal growth, 2001, 卷号: 227, 页码: 816-819 作者:  Li, JM;  Sun, GS;  Zhu, SR;  Wang, L;  Luo, MC 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 X-ray diffraction  Molecular beam epitaxy  Semiconducting silicon compounds   Epitaxial growth of sic on complex substrates 期刊论文  iSwitch采集 Journal of crystal growth, 2001, 卷号: 227, 页码: 811-815 作者:  Sun, GS;  Li, JM;  Luo, MC;  Zhu, SR;  Wang, L 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Optical microscopy  X-ray diffraction  Molecular beam epitaxy  Semiconducting silicon compounds   Epitaxial growth of SiC on complex substrates 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：79/6  |  提交时间：2010/08/12 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS