机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [9]

发表日期

• 2007 [1]
• 2005 [1]
• 2003 [3]
• 2001 [3]
• 1986 [1]

学科主题

• 半导体物理 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy 期刊论文  OAI收割 physical review b, 2007, 卷号: 75, 期号: 18, 页码: art.no.184103 Tang CY; Li FH; Wang R; Zou J; Zheng XH; Liang JW 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/29 IMAGE DECONVOLUTION   Photonic band structures of two-dimensional photonic crystals with deformed lattices 期刊论文  OAI收割 chinese physics, 2005, 卷号: 14, 期号: 12, 页码: 2507-2513 Cai XH; Zheng WH; Ma XT; Ren G; Xia JB 收藏  |  浏览/下载：34/19  |  提交时间：2010/03/17 photonic band gap   Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition 期刊论文  OAI收割 applied physics letters, 2003, 卷号: 83, 期号: 20, 页码: 4149-4151 作者:  Jiang DS;  Zhang YH 收藏  |  浏览/下载：183/0  |  提交时间：2010/08/12 1.3-MU-M VCSELS  GAAS  SUPERLATTICES   Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation 期刊论文  OAI收割 applied physics letters, 2003, 卷号: 82, 期号: 2, 页码: 206-208 Feng ZH; Yang H; Zheng XH; Fu Y; Sun YP; Shen XM; Wang YT 收藏  |  浏览/下载：21/0  |  提交时间：2010/08/12 EPITAXIAL-GROWTH  FILMS  GAAS   Synthesis of composite AIN powder mixed with sintering additives by the Lanxide method 期刊论文  OAI收割 journal of inorganic materials, 2003, 卷号: 18, 期号: 6, 页码: 1351-1356 Lin ZL; Zheng XH; Wang Q; Zhou ML 收藏  |  浏览/下载：46/20  |  提交时间：2010/03/09 AlN powder   Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD 期刊论文  OAI收割 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 777-782 Zheng XH; Qu B; Wang YT; Dai ZZ; Yang H; Liang JW 收藏  |  浏览/下载：95/12  |  提交时间：2010/08/12 3C-SiC  microtwins  X-ray four-circle diffractometer  APCVD  CHEMICAL-VAPOR-DEPOSITION  SILICON-CARBIDE  PHASE EPITAXY  THIN-FILMS  GAN  SI  SUBSTRATE  DEFECTS  NITRIDE  MBE   Surface roughness and high density of cubic twins and hexagonal inclusions in cubic GaN epilayers 期刊论文  OAI收割 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 796-800 Qu B; Li SF; Hu GX; Zheng XH; Wang YT; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：88/3  |  提交时间：2010/08/12 GaN  polarity  surface roughness  FILMS  STABILITY  GROWTH   Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers 期刊论文  OAI收割 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 4, 页码: 497-503 Qu B; Zheng XH; Wang YT; Feng ZH; Han JY; Liu S; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：106/6  |  提交时间：2010/08/12 four-circle diffraction  GaN  phase content  MOLECULAR-BEAM EPITAXY  GAN FILMS  GROWTH  STABILITY  RATIO   TRANSPORT-PROPERTIES OF SI MOS INVERSION-LAYERS IN HIGH MAGNETIC-FIELDS AT LOW-TEMPERATURE 期刊论文  OAI收割 chinese physics, 1986, 卷号: 6, 期号: 2, 页码: 484-488 ZHENG HZ; CHENG WC; ZHU YT; WANG XH; LI YX; BI KK; LI CF; JIANG PH 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15