中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [18]
采集方式
OAI收割 [18]
内容类型
期刊论文 [18]
发表日期
2017 [1]
2016 [2]
2015 [1]
2013 [4]
2011 [1]
2010 [4]
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学科主题
半导体物理 [18]
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Anomalous resistivity upturn in epitaxial L21-Co2MnAl films
期刊论文
OAI收割
Scientific Reports, 2017, 卷号: 7, 页码: 42931
作者:
L. J. Zhu
;
J. H. Zhao
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2018/07/02
Composition-tuned magneto-optical Kerr effect in L10-MnxGa films with giant perpendicular anisotropy
期刊论文
OAI收割
journal of physics d: applied physics, 2016, 卷号: 49, 页码: 245001
L. J. Zhu
;
L. Brandt
;
J. H. Zhao
;
G. Woltersdorf
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2017/03/10
Anomalous Hall effect in L10-MnAl films with controllable orbital two-channel Kondo effect
期刊论文
OAI收割
physical review b, 2016, 卷号: 93, 期号: 19, 页码: 195112
L. J. Zhu
;
S. H. Nie
;
J. H. Zhao
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2017/03/16
Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure
期刊论文
OAI收割
journal of applied physics, 2015, 卷号: 117, 期号: 1, 页码: 014304
P. Y. Zhou
;
X. F. Wu
;
K. Ding
;
X. M. Dou
;
G. W. Zha
;
H. Q. Ni
;
Z. C. Niu
;
H. J. Zhu
;
D. S. Jiang
;
C. L. Zhao
;
B. Q. Sun
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2016/03/29
Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer
期刊论文
OAI收割
physical review letters, Physical Review Letters, 2013, 2013, 卷号: 111, 111, 期号: 2, 页码: 027203, 027203
作者:
Nie, S. H.
;
Chin, Y. Y.
;
Liu, W. Q.
;
Tung, J. C.
;
Lu, J.
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2014/03/26
Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs
期刊论文
OAI收割
Applied Physics Letters, Applied Physics Letters, 2013, 2013, 卷号: 102, 102, 期号: 15, 页码: 152405, 152405
作者:
Nie, S. H.
;
Zhu, L. J.
;
Lu, J.
;
Pan, D.
;
Wang, H. L.
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2014/03/26
Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2013, 2013, 卷号: 102, 102, 期号: 13, 页码: 132403, 132403
作者:
Zhu, L. J.
;
Pan, D.
;
Nie, S. H.
;
Lu, J.
;
Zhao, J. H.
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2013/08/27
Perpendicularly magnetized tau-MnAl (001) thin films epitaxied on GaAs
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2013, 2013, 卷号: 102, 102, 期号: 15, 页码: 152405, 152405
作者:
Nie, S. H.
;
Zhu, L. J.
;
Lu, J.
;
Pan, D.
;
Wang, H. L.
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/08/27
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
期刊论文
OAI收割
journal of optics, JOURNAL OF OPTICS, 2010, 2010, 卷号: 12, 12, 期号: 5, 页码: art. no. 055203, Art. No. 055203
作者:
Huang X (Huang X.)
;
Zhang XH (Zhang X. H.)
;
Zhu YG (Zhu Y. G.)
;
Li T (Li T.)
;
Han LF (Han L. F.)
  |  
收藏
  |  
浏览/下载:77/6
  |  
提交时间:2010/08/17
InAs quantum dots
Inas Quantum Dots
Nonlinear Refraction
Reflection Z-scan
Dc Electric Field Effect
Electrooptic Properties
Saturable Absorber
Optical-properties
Well Structures
Single-beam
Band-gap
Electroabsorption
Absorption
Reflection
Dependence
nonlinear refraction
reflection Z-scan
dc electric field effect
ELECTROOPTIC PROPERTIES
SATURABLE ABSORBER
OPTICAL-PROPERTIES
WELL STRUCTURES
SINGLE-BEAM
BAND-GAP
ELECTROABSORPTION
ABSORPTION
REFLECTION
DEPENDENCE