机构

• 半导体研究所 [13]

采集方式

• OAI收割 [13]

内容类型

• 会议论文 [13]

发表日期

• 2006 [2]
• 2001 [1]
• 2000 [2]
• 1999 [1]
• 1998 [3]
• 1997 [4]
• 更多

学科主题

• 半导体物理 [13]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 内容类型：会议论文    学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：118/36  |  提交时间：2010/03/29 surface morphology evolution  InAs nanostructures  island-pit pairs  MOLECULAR-BEAM EPITAXY  QUANTUM DOTS  COOPERATIVE NUCLEATION  HETEROEPITAXY  TRANSITION  ISLANDS  GROWTH   Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：81/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文  OAI收割 9th international conference on high pressure semiconductor physics (hpsp9), sapporo, japan, sep 24-28, 2000 Li GH; Chen Y; Fung ZL; Ding K; Han HX; Zhou W; Wang ZG 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 HYDROSTATIC-PRESSURE  PHOTOLUMINESCENCE  GAAS  LUMINESCENCE  GROWTH  INSB  GASB   Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文  OAI收割 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Han PD 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 AlGaN/GaN heterostructures  In-doping  2DEG  electron sheet density  X-ray diffraction  etching  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MOBILITY  GROWTH  FILMS   Methods to tune the electronic states of self-organized InAs/GaAs quantum dots 会议论文  OAI收割 5th international conference on the electrical transport and optical properties of inhomogeneous media (etopim5), hong kong, hong kong, jun 21-25, 1999 作者:  Wang H;  Jiang DS;  Wang H;  Niu ZC 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 quantum dot  growth interruption  quantum dot laser   New way to enhance the uniformity of self-organized InAs quantum dots 会议论文  OAI收割 25th international symposium on compound semiconductors, nara, japan, oct 12-16, 1998 Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 MOLECULAR-BEAM EPITAXY  THRESHOLD  GROWTH  LASER   Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文  OAI收割 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Peng RW; Ding YQ; Xu CM; Wang XG 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 VAPOR-PHASE EPITAXY  GROWTH   New method for the growth of highly uniform quantum dots 会议论文  OAI收割 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 Pan D; Zeng YP; Kong MY 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 self-formed quantum dot  Stranski-Krastanow growth mode  superlattice  MOLECULAR-BEAM EPITAXY  INGAAS  GAAS  DISLOCATIONS  MULTILAYERS  DEFECTS  STRAIN   Observation of defects in GaN epilayers 会议论文  OAI收割 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Kang JY; Liu XL; Ogawa T 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 SCATTERING  SAPPHIRE  GROWTH   Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文  OAI收割 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 作者:  Han PD 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 GAAS  GROWTH