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Chinese Academy of Sciences Institutional Repositories Grid
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Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures 期刊论文  OAI收割
Journal of Materials Science, 2021, 卷号: 56, 期号: 2, 页码: 1481-1491
作者:  
M. Tian;  C. Ma;  T. Lin;  J. Liu;  D. N. Talwar
  |  收藏  |  浏览/下载:7/0  |  提交时间:2022/06/13
Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers 期刊论文  OAI收割
Materials Chemistry and Physics, 2020, 卷号: 252, 页码: 16
作者:  
D. N. Talwar,H. H. Lin and Z. C. Feng
  |  收藏  |  浏览/下载:7/0  |  提交时间:2021/07/06
Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文  OAI收割
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  
D. N. Talwar, H. H. Lin and Z. C. Feng
  |  收藏  |  浏览/下载:67/0  |  提交时间:2021/07/06