机构

• 近代物理研究所 [3]
• 长春光学精密机械与物... [1]
• 大连化学物理研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [3]
• 会议论文 [2]

发表日期

• 2019 [1]
• 2015 [2]
• 2008 [2]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 A near ambient pressure photoemission electron microscope (NAP-PEEM) 期刊论文  OAI收割 ULTRAMICROSCOPY, 2019, 卷号: 200, 页码: 105-110 作者:  Ning, Yanxiao;  Fu, Qiang;  Li, Yifan;  Zhao, Siqin;  Wang, Chao   |  收藏  |  浏览/下载：89/0  |  提交时间：2019/06/20 PEEM  LEEM  Differential pumping  Near ambient pressure surface techniques  High pressure cell   Experimental techniques for in-ring reaction experiments 期刊论文  OAI收割 PHYSICA SCRIPTA, 2015, 卷号: T166, 页码: 5 作者:  Kollmus, H.;  Kroell, T.;  Kuilman, M.;  Najafi, M. A.;  Chung, L. X.   |  收藏  |  浏览/下载：25/0  |  提交时间：2018/05/31 in-ring experiments  UHV technology  differential pumping  radioactive beams  elastic proton scattering  Ni-56,Ni-58   Experimental techniques for in-ring reaction experiments 会议论文  OAI收割 作者:  Kalantar-Nayestanaki, N.;  EXL Collaboration;  Zamora, J. C.;  Yue, K.;  Traeger, M.   |  收藏  |  浏览/下载：27/0  |  提交时间：2018/08/20 in-ring experiments  UHV technology  differential pumping  radioactive beams  elastic proton scattering  Ni-56,Ni-58   Research for a clean and large throughput differential pumping system 期刊论文  OAI收割 CHINESE PHYSICS C, 2008, 卷号: 32, 期号: Suppl. 1, 页码: 59-61 作者:  Meng Jun;  Yang Xiao-Tian;  Zhang Su-Ping;  Chu Ji-Guo   |  收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 clean and large throughput differential pumping system  new kind of Molecular/Booster Pump  back-oil  residual gas analysis   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.