中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共11条，第1-10条

帮助

条数/页：排序方式：
	Anion photoelectron spectroscopy and chemical bonding of ThO2- and ThO3- 期刊论文 OAI收割 JOURNAL OF CHEMICAL PHYSICS, 2018, 卷号: 148, 期号: 24, 页码: - 作者: Li, YL; Zou, JH; Xiong, XG; Xie, H; Tang, ZC \| 收藏 \| 浏览/下载：21/0 \| 提交时间：2019/12/17 2-ELECTRON VALENCE INDEXES ELECTRONIC-STRUCTURE INFRARED-SPECTRA ROTATIONAL ANALYSIS ACTINIDE COMPLEXES URANIUM-OXIDES BAND SYSTEMS BASIS-SETS MATRIX UO2
	Spinel oxides: Delta(1) spin-filter barrier for a class of magnetic tunnel junctions 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 22 Zhang, J; Zhang, XG; Han, XF 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/09/24 ELECTRONIC-STRUCTURE ROOM-TEMPERATURE LARGE MAGNETORESISTANCE BAND-STRUCTURE VALENCE BANDS ENERGY-BANDS
	Site preference of Ru in NiAl and valence band structure of NiAl containing Ru: First-principles study and photoelectron spectrum 期刊论文 OAI收割 Philosophical Magazine Letters, 2010, 卷号: 90, 期号: 4, 页码: 225-232 H. Wei; J. J. Liang; B. Z. Sun; Q. Zheng; X. F. Sun; P. Peng; M. S. Dargusch; X. Yao 收藏 \| 浏览/下载：13/0 \| 提交时间：2012/04/13 NiAl-Ru alloys valence band structure Auger electron spectroscopy (AES) auger parameter ab-initio alloys magnetism additions system energy atoms cr re
	Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys 期刊论文 OAI收割 Journal of Applied Physics, 2009, 卷号: 106, 期号: 11 作者: Yang H (杨辉); Xu K (徐科); Shi L (石林) 收藏 \| 浏览/下载：200/61 \| 提交时间：2011/03/14 ab initio calculations crystal structure energy gap gallium compounds high-pressure effects III-V semiconductors indium compounds valence bands wide band gap semiconductors
	The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells 期刊论文 OAI收割 Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660 S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao 收藏 \| 浏览/下载：17/0 \| 提交时间：2012/11/06 Indium segregation Optical gain Valence band structure Quantum well molecular-beam-epitaxy surface segregation lasers subbands parameters growth atoms gaas
	The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells 期刊论文 OAI收割 Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660 S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao 收藏 \| 浏览/下载：13/0 \| 提交时间：2012/11/06 Indium segregation Optical gain Valence band structure Quantum well molecular-beam-epitaxy surface segregation lasers subbands parameters growth atoms gaas
	Syntheses, crystal structures and optical properties of the first strontium selenium(IV) and tellurium(IV) oxychlorides: Sr-3(SeO3)(Se2O5)Cl-2 and Sr-4(Te3O8)Cl-4 期刊论文 OAI收割 Journal of Solid State Chemistry, 2008, 卷号: 181, 期号: 2, 页码: 345-354 H. L. Jiang and J. G. Mao 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/01/22 strontium(II) Se(IV) or Te(IV) oxychloride solid-state reaction crystal structure band structure optical properties hydrogen selenite diselenite bond-valence parameters magnetic-properties electronic-structure oxide materials br cl tellurite compound phase
	Synthesis, crystal and band structures, and optical properties of a new lanthanide-alkaline earth tellurium(IV) oxide: La2Ba(Te3O8)(TeO3)(2) 期刊论文 OAI收割 Journal of Solid State Chemistry, 2007, 卷号: 180, 期号: 5, 页码: 1764-1769 H. L. Jiang; F. Kong; J. G. Mao 收藏 \| 浏览/下载：9/0 \| 提交时间：2013/04/01 solid state reaction crystal structure band structure La-Ba tellurium(IV) oxide optical properties bond-valence parameters pair channel structure magnetic-properties quaternary tellurites transition-metal oxotellurate(iv) selenites phase pseudopotentials oxoselenate(iv)
	Valence band photoemission of Sm fullerides 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 8, 页码: 4265-4270 作者: Wang, XX; Li, HN; Qian HJ(钱海杰); Su R(苏润); Zhong J(钟俊) 收藏 \| 浏览/下载：14/0 \| 提交时间：2016/06/29 Sm-intercalated C-60 valence band photoemission electronic structure