机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [4]

发表日期

• 2007 [4]

学科主题

• 半导体材料 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 存缴方式：oaiharvest    发表日期：2007    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 2DEG   Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841 Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping) 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29 AlxGa1-xN   Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409 Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin) 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY   Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy 期刊论文  OAI收割 nanotechnology, 2007, 卷号: 18, 期号: 16, 页码: art.no.165301 Wu, J (Wu, J.); Jin, P (Jin, P.); Jiao, YH (Jiao, Y. H.); Lv, XJ (Lv, X. J.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/29 ASSEMBLED QUANTUM DOTS