机构

• 半导体研究所 [216]

采集方式

• OAI收割 [216]

内容类型

• 期刊论文 [192]
• 会议论文 [22]
• 学位论文 [2]

发表日期

• 2011 [8]
• 2010 [5]
• 2009 [8]
• 2008 [11]
• 2007 [8]
• 2006 [16]
• 更多

学科主题

• 半导体物理 [216]
• 半导体器件 [2]
• 半导体材料 [2]

筛选

浏览/检索结果: 共216条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 中红外波段GaSb基激光器的材料生长与器件制备 学位论文  OAI收割 硕士, 北京: 中国科学院大学, 2017 柴小力 收藏  |  浏览/下载：43/0  |  提交时间：2017/05/31 窄带隙半导体  锑化镓量子阱  中红外激光器  分子束外延  DBR光栅   硅基III-V族半导体材料的外延生长及量子点激光器研究 学位论文  OAI收割 博士, 北京: 中国科学院研究生院, 2016 刘广政 收藏  |  浏览/下载：505/0  |  提交时间：2016/06/03 GaAs/Si  GaAs/Ge  两步法  四步法  量子点  激光器   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507 作者:  Shen C;  Wang LG;  Zheng HZ;  Zhu H;  Chen L   |  收藏  |  浏览/下载：43/5  |  提交时间：2011/07/05 GALLIUM-ARSENIDE  SEMICONDUCTORS  FIELD  Gallium-arsenide  Semiconductors  Field   Dynamics of dense spin ensemble excited in a barrier layer and detected in a well 期刊论文  OAI收割 science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 2011, 卷号: 54, 54, 期号: 6, 页码: 1108-1111, 1108-1111 作者:  Shen C;  Wang LG;  Zhu H;  Zheng HZ;  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn   |  收藏  |  浏览/下载：62/0  |  提交时间：2011/07/05 spin polarized transport  optical orientation  dense spin relaxation  quantum well  TRANSPORT  Spin Polarized Transport  Optical Orientation  Dense Spin Relaxation  Quantum Well  Transport   Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文  OAI收割 ieee transactions on nanotechnology, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 2011, 卷号: 10, 10, 期号: 1, 页码: 53-58, 53-58 作者:  Lu XF;  Balocco C;  Yang FH;  Song AM;  Lu, XF, Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, Englandxiaofeng.lu@manchester.ac.uk   |  收藏  |  浏览/下载：71/7  |  提交时间：2011/07/05 Atomic-force microscope (AFM)  nanolithography  self-switching diodes (SSDs)  2-D electron gas  CONDUCTING POLYMER-FILMS  NANOMETER-SCALE  LITHOGRAPHY  FABRICATION  SURFACES  DEVICES  NANOSTRUCTURES  Atomic-force Microscope (Afm)  Nanolithography  Self-switching Diodes (Ssds)  2-d Electron Gas  Conducting Polymer-films  Nanometer-scale  Lithography  Fabrication  Surfaces  Devices  Nanostructures   Correlation measurement of quantum cascade photons in single InAs quantum dot 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.17804, Article no.17804 作者:  Li YA;  Dou XM;  Chang XY;  Ni HQ;  Niu ZC   |  收藏  |  浏览/下载：42/2  |  提交时间：2011/07/05 single quantum dot  exciton and biexciton  photoluminescence spectrum  cascade emission  Single Quantum Dot  Exciton And biExciton  Photoluminescence Spectrum  Cascade Emission   Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文  OAI收割 physica status solidi a-applications and materials science, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 2011, 卷号: 208, 208, 期号: 4, 页码: 843-850, 843-850 作者:  Zhu BL;  Zhu SJ;  Zhao XZ;  Su FH;  Li GH   |  收藏  |  浏览/下载：96/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE  Conductivity  Doping  Photoluminescence  Pulsed Laser Deposition  Zno  Zinc-oxide  Electrical-properties  Optical-properties  Oxygen-pressure  Photoluminescence  Luminescence  Violet  Growth  Fabrication  Dependence   Single-photon interference based on a single InAs quantum dot 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 3, 页码: article no.37809, Article no.37809 作者:  Li YA;  Dou XM;  Chang XY;  Ni HQ;  Niu ZC   |  收藏  |  浏览/下载：56/4  |  提交时间：2011/07/05 single quantum dot  antibunching effect  Mach-Zehnder interferometer  LIGHT  RESONANCE  Single Quantum Dot  Antibunching Effect  Mach-zehnder Interferometer  Light  Resonance