中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
采集方式
OAI收割 [11]
内容类型
期刊论文 [11]
发表日期
2011 [1]
2008 [4]
2001 [2]
1997 [1]
1991 [3]
学科主题
半导体物理 [11]
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学科主题:半导体物理
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Correlation measurement of quantum cascade photons in single InAs quantum dot
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.17804, Article no.17804
作者:
Li YA
;
Dou XM
;
Chang XY
;
Ni HQ
;
Niu ZC
  |  
收藏
  |  
浏览/下载:42/2
  |  
提交时间:2011/07/05
single quantum dot
exciton and biexciton
photoluminescence spectrum
cascade emission
Single Quantum Dot
Exciton And biExciton
Photoluminescence Spectrum
Cascade Emission
Single-photon emission from a single InAs quantum dot
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 501-504
Dou, XM
;
Sun, BQ
;
Huang, SS
;
Ni, HQ
;
Niu, ZC
收藏
  |  
浏览/下载:39/2
  |  
提交时间:2010/03/08
FLUORESCENCE
TEMPERATURE
Single-photon-emitting diode at liquid nitrogen temperature
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 101107
作者:
Chang XY
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/03/08
QUANTUM-DOT
Circular photogalvanic effect at inter-band excitation in InN
期刊论文
OAI收割
solid state communications, 2008, 卷号: 145, 期号: 4, 页码: 159-162
Zhang, Z
;
Zhang, R
;
Liu, B
;
Xie, ZL
;
Xiu, XQ
;
Han, R
;
Lu, H
;
Zheng, YD
;
Chen, YH
;
Tang, CG
;
Wang, ZG
收藏
  |  
浏览/下载:67/2
  |  
提交时间:2010/03/08
InN
photogalvanic
inter-band transition
Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3231-3233
作者:
Chang XY
收藏
  |  
浏览/下载:84/0
  |  
提交时间:2010/03/08
FLUORESCENCE
Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation
期刊论文
OAI收割
journal of physics-condensed matter, 2001, 卷号: 13, 期号: 37, 页码: 8467-8474
Liu BL
;
Xu ZY
;
Wang BS
;
Deng YM
;
Yang FH
;
Ge WK
收藏
  |  
浏览/下载:94/12
  |  
提交时间:2010/08/12
SEMICONDUCTOR MICROCAVITIES
SPONTANEOUS EMISSION
EXCITON
SCATTERING
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
期刊论文
OAI收割
solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157
Wang LS
;
Fong WK
;
Surya C
;
Cheah KW
;
Zheng WH
;
Wang ZG
收藏
  |  
浏览/下载:73/5
  |  
提交时间:2010/08/12
p-type GaN
metalorganic chemical vapor deposition
photoluminescence
X-ray diffraction
rapid-thermal annealing
P-TYPE GAN
RECOMBINATION
EMISSION
ENERGY
BANDS
Sulfur forming an isoelectronic center in zinc telluride thin films
期刊论文
OAI收割
physical review b, 1997, 卷号: 55, 期号: 15, 页码: 10035-10039
Ge WK
;
Lam SB
;
Sou IK
;
Wang J
;
Wang Y
;
Li GH
;
Han HX
;
Wang ZP
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/17
MOLECULAR-BEAM
ZNS-TE
GAAS
ZNTE
ALLOYS
1ST-PRINCIPLES CALCULATIONS FOR QUASI-PARTICLE ENERGIES OF GAP AND GAAS
期刊论文
OAI收割
physical review b, 1991, 卷号: 44, 期号: 16, 页码: 8707-8712
WANG JQ
;
GU ZQ
;
LI MF
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
EXCHANGE-CORRELATION POTENTIALS
DENSITY-FUNCTIONAL THEORY
ZINCBLENDE SEMICONDUCTORS
STRUCTURAL-PROPERTIES
ELECTRON
SILICON
PSEUDOPOTENTIALS
DISCONTINUITY
APPROXIMATION
INSULATORS
1ST PRINCIPLE CALCULATIONS OF QUASI-PARTICLE ENERGIES FOR BAND STRUCTURES OF SEMICONDUCTORS
期刊论文
OAI收割
communications in theoretical physics, 1991, 卷号: 15, 期号: 2, 页码: 169-194
WANG JQ
;
GU ZQ
;
WANG BS
;
LI MF
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
NORM-CONSERVING PSEUDOPOTENTIALS
ANGLE-RESOLVED PHOTOEMISSION
DENSITY-FUNCTIONAL THEORY
GROUND-STATE
ZINCBLENDE SEMICONDUCTORS
CRYSTALLINE SILICON
ELECTRON
SI
INSULATORS
GAAS