机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2005 [4]

学科主题

• 光电子学 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2005    学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：115/47  |  提交时间：2010/03/17 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA  output light power of 4.5 mW  and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover  over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device  10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.   10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 9, 页码: 917-920 Li BX; Zhu HL; Zhang J; Zhao Q; Pian JQ; Ding Y; Wang BJ; Bian J; Zhao LJ; Wang W 收藏  |  浏览/下载：107/24  |  提交时间：2010/03/17 BANDWIDTH   Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O 会议论文  OAI收割 conference on optoelectronic materials and devices for optical communications, shanghai, peoples r china, nov 07-10, 2005 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：179/26  |  提交时间：2010/03/29 selective-area growth  ultra-low-pressure  integrated optoelectronics  optical pulse generation  RING LASER   Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 544-547 作者:  Pan JQ 收藏  |  浏览/下载：52/32  |  提交时间：2010/03/17 VAPOR-PHASE EPITAXY