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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [12]
采集方式
OAI收割 [12]
内容类型
期刊论文 [12]
发表日期
2011 [12]
学科主题
半导体物理 [12]
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发表日期:2011
学科主题:半导体物理
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Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy
期刊论文
OAI收割
physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 393-395, 393-395
作者:
Wang, S.L.
;
Meng, K.K.
;
Chen, L.
;
Xu, P.F.
;
Meng, H.J.
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收藏
  |  
浏览/下载:68/0
  |  
提交时间:2012/06/14
Drop formation
Epitaxial growth
Ferromagnetic materials
Ferromagnetism
Gallium alloys
High resolution transmission electron microscopy
Magnetic semiconductors
Manganese
Semiconducting silicon
Semiconductor growth
Semiconductor quantum dots
Drop Formation
Epitaxial Growth
Ferromagnetic Materials
Ferromagnetism
Gallium Alloys
High Resolution Transmission Electron Microscopy
Magnetic Semiconductors
Manganese
Semiconducting Silicon
Semiconductor Growth
Semiconductor Quantum Dots
Tuning Electron Spin States in Quantum Dots by Spin-Orbit Interactions
期刊论文
OAI收割
chinese physics letters, CHINESE PHYSICS LETTERS, 2011, 2011, 卷号: 28, 28, 期号: 6, 页码: article no.67303, Article no.67303
作者:
Liu Y
;
Cheng F
;
Liu, Y, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. yuliu@semi.ac.cn
  |  
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2011/07/05
ARTIFICIAL ATOMS
RESONANCE
MEMORY
LAYERS
WELLS
GATE
Artificial Atoms
Resonance
Memory
Layers
Wells
Gate
Two-phonon processes of intraband relaxation in the terahertz regime in quantum dots
期刊论文
OAI收割
journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 2011, 卷号: 23, 23, 期号: 22, 页码: article no.225303, Article no.225303
作者:
Wang ZW
;
Li SS
;
Wang, ZW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. zwwang@semi.ac.cn
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收藏
  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures
期刊论文
OAI收割
physical review letters, PHYSICAL REVIEW LETTERS, 2011, 2011, 卷号: 106, 106, 期号: 20, 页码: article no.206802, Article no.206802
作者:
Chang K
;
Lou WK
;
Chang, K, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
  |  
收藏
  |  
浏览/下载:54/2
  |  
提交时间:2011/07/05
TOPOLOGICAL INSULATORS
WELLS
PHASE
SPINS
Topological Insulators
Wells
Phase
Spins
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
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收藏
  |  
浏览/下载:24/0
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提交时间:2012/01/06
1.3 MU-M
STRAIN RELIEF
LASERS
SUBSTRATE
PHOTOLUMINESCENCE
DISLOCATIONS
OPERATION
RANGE
1.3 Mu-m
Strain Relief
Lasers
Substrate
Photoluminescence
Dislocations
Operation
Range
Large-deviation analysis for counting statistics in mesoscopic transport
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2011, 2011, 卷号: 84, 84, 期号: 11, 页码: 115319, 115319
作者:
Li J
;
Liu Y
;
Ping J
;
Li SS
;
Li XQ
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收藏
  |  
浏览/下载:10/0
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提交时间:2012/01/06
SHOT-NOISE
QUANTUM
INTERFEROMETER
INTERFERENCE
DETECTOR
DOT
Shot-noise
Quantum
Interferometer
Interference
Detector
Dot
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320
作者:
Ning JQ
;
Xu SJ
;
Ruan XZ
;
Ji Y
;
Zheng HZ
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收藏
  |  
浏览/下载:14/0
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提交时间:2012/01/06
WELLS
RELAXATION
HOLE
PHOTOLUMINESCENCE
SEMICONDUCTORS
LOCALIZATION
TRANSITIONS
EXCITONS
CARRIERS
GROWTH
Wells
Relaxation
Hole
Photoluminescence
Semiconductors
Localization
Transitions
Excitons
Carriers
Growth
Effective channels of breaking the phonon bottleneck: A lattice relaxation approach
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 4, 页码: 43512, 43512
作者:
Wang ZW
;
Li SS
;
Wang, ZW (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, zwwang@semi.ac.cn
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收藏
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浏览/下载:25/0
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提交时间:2012/01/06
QUANTUM DOTS
ENERGY-RELAXATION
ELECTRON RELAXATION
Quantum Dots
Energy-relaxation
Electron Relaxation
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 11, 页码: 113514, 113514
作者:
Shang XJ
;
He JF
;
Li MF
;
Zhan F
;
Ni HQ
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收藏
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浏览/下载:17/0
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提交时间:2012/01/06
WELL INFRARED PHOTODETECTOR
PHOTOCURRENT
EFFICIENCY
Well Infrared Photodetector
Photocurrent
Efficiency
Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 3, 页码: 32102, 32102
作者:
Liu Y
;
Cheng F
;
Li XJ
;
Peeters FM
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收藏
  |  
浏览/下载:19/0
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提交时间:2012/01/06
ARTIFICIAL ATOMS
Artificial Atoms