中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [9]
采集方式
OAI收割 [9]
内容类型
期刊论文 [9]
发表日期
2011 [1]
2007 [1]
2006 [5]
2000 [1]
1998 [1]
学科主题
光电子学 [9]
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浏览/检索结果:
共9条,第1-9条
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学科主题:光电子学
专题:半导体研究所
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A practical route towards fabricating GaN nanowire arrays
期刊论文
OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
Grating optimization and experiment on high-power distributed feedback lasers
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1613-1616
Fu SH (Fu Sheng-Hui)
;
Song GF (Song Guo-Feng)
;
Chen LH (Chen Liang-Hui)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/03/29
DFB lasers
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
期刊论文
OAI收割
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:
Zhang SM
收藏
  |  
浏览/下载:83/0
  |  
提交时间:2010/04/11
nitrides
multiple quantum wells
cracks
dislocations
vacancies x-ray diffraction
X-RAY-DIFFRACTION
EDGE DISLOCATIONS
GAN
FILMS
SUPERLATTICES
RELAXATION
STRAIN
Strain evolution in GaN layers grown on high-temperature AlN interlayers
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.)
;
Yao DZ (Yao D. Z.)
;
Chen J (Chen J.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Jiang DS (Jiang D. S.)
;
Yang H (Yang H.)
;
Liang JW (Liang J. W.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
STRESS EVOLUTION
DEFECT STRUCTURE
EPITAXIAL GAN
THIN-FILMS
ALGAN
DISLOCATIONS
RELAXATION
REDUCTION
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114
Wang H (Wang H.)
;
Huang Y (Huang Y.)
;
Sun Q (Sun Q.)
;
Chen J (Chen J.)
;
Wang LL (Wang L. L.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Zhang SM (Zhang S. M.)
;
Jiang DS (Jiang D. S.)
;
Wang YT (Wang Y. T.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
X-RAY-DIFFRACTION
ELECTRON-TRANSPORT
EPITAXIAL GAN
BAND-GAP
DISLOCATIONS
SAPPHIRE
ALN
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.143505
Wang RX (Wang R. X.)
;
Xu SJ (Xu S. J.)
;
Shi SL (Shi S. L.)
;
Beling CD (Beling C. D.)
;
Fung S (Fung S.)
;
Zhao DG (Zhao D. G.)
;
Yang H (Yang H.)
;
Tao XM (Tao X. M.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
DISLOCATIONS
DEGRADATION
High-power AlGaInP laser diodes with current-injection-free region near the laser facet
期刊论文
OAI收割
optical engineering, 2006, 卷号: 45, 期号: 3, 页码: art.no.034205
Xu Y
;
Li YZ
;
Gan QQ
;
Cao Q
;
Song GF
;
Guo L
;
Chen LH
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/04/11
laser diodes
AlGaInP
ridge waveguide
current-injection-free region
OPERATION
The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy
期刊论文
OAI收割
journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193
Wang HL
;
Zhu HJ
;
Ning D
;
Wang H
;
Wang XD
;
Guo ZS
;
Feng SL
收藏
  |  
浏览/下载:83/0
  |  
提交时间:2010/08/12
atomic hydrogen-assisted molecular beam epitaxy
deep level transient spectroscopy
deep level defects
DISLOCATION DENSITY
IRRADIATION
New method for the growth of highly uniform quantum dots
期刊论文
OAI收割
microelectronic engineering, 1998, 卷号: 43-44, 期号: 0, 页码: 79-83
Pan D
;
Zeng YP
;
Kong MY
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/08/12
self-formed quantum dot
Stranski-Krastanow growth mode
superlattice
INGAAS
GAAS
DISLOCATIONS
MULTILAYERS
DEFECTS
STRAIN
MOLECULAR-BEAM EPITAXY