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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [9]
采集方式
OAI收割 [9]
内容类型
会议论文 [9]
发表日期
2006 [1]
2004 [3]
2002 [1]
2001 [1]
2000 [2]
1998 [1]
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学科主题
半导体材料 [9]
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学科主题:半导体材料
内容类型:会议论文
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The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
OAI收割
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
OAI收割
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)
会议论文
OAI收割
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Wang YL
;
Wu J
;
Chen YH
;
Wang ZG
;
Zeng YP
收藏
  |  
浏览/下载:125/17
  |  
提交时间:2010/03/29
LAYER-ORDERING ORIENTATION
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
会议论文
OAI收割
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:82/12
  |  
提交时间:2010/03/29
1.3 MU-M
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
会议论文
OAI收割
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Xie MH
;
Cheung SH
;
Zheng LX
;
Tong SY
;
Zhang BS
;
Yang H
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/15
MOLECULAR-BEAM EPITAXY
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/15
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
Influence of precipitates on GaN epilayer quality
会议论文
OAI收割
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY
;
Huang QS
;
Wang ZG
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
precipitate
GaN
WDS
TEM
cathodoluminescence
VAPOR-PHASE EPITAXY
FILMS
MECHANISM
GROWTH
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
会议论文
OAI收割
50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
self-assembled quantum dots
InP substrate
high index
In(Ga,Al)As/InAlAs/InP
MBE
MOLECULAR-BEAM-EPITAXY
VAPOR-PHASE EPITAXY
GAAS
ISLANDS
PHOTOLUMINESCENCE
INP(001)
GROWTH
LASERS
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
会议论文
OAI收割
5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998
Mo QW
;
Fan TW
;
Gong Q
;
Wu J
;
Wang ZG
;
Bai YQ
;
Zhang W
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
COHERENT ISLANDS
GAAS
GROWTH
DOTS
DISLOCATIONS
TEMPERATURE
MECHANISMS
SI(001)
INGAAS