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CAS IR Grid
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半导体研究所 [49]
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OAI收割 [49]
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期刊论文 [46]
会议论文 [3]
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2011 [4]
2010 [2]
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半导体材料 [49]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
期刊论文
OAI收割
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:
Song HP
收藏
  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SEMICONDUCTOR NANOWIRES
NITRIDE NANOTUBES
GAN
EMISSION
MECHANISM
GaN grown with InGaN as a weakly bonded layer
期刊论文
OAI收割
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:
Wei HY
;
Song HP
收藏
  |  
浏览/下载:63/4
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SI(001) SUBSTRATE
STRAIN
EPITAXY
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108
作者:
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
  |  
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Gan-based
Led
Al Composition
Electron Blocking Layer
Temperature
Alloys
Movpe
Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition
期刊论文
OAI收割
applied surface science, 2010, 卷号: 256, 期号: 8, 页码: 2606-2610
作者:
Wei HY
;
Jia CH
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:156/40
  |  
提交时间:2010/04/04
ZnO
Metal-organic chemical vapor deposition
Infrared absorption
Surface
RAY PHOTOELECTRON-SPECTROSCOPY
POLAR-SURFACE
EPITAXY
Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s
期刊论文
OAI收割
chemistry of materials, 22 (4): feb 23 2010, CHEMISTRY OF MATERIALS, 22 (4): FEB 23 2010, 2010, 2010, 卷号: 22, 22, 期号: 4, 页码: 1294-1296, 1294-1296
作者:
Wen Q (Wen Qian)
;
Zhang RF (Zhang Rufan)
;
Qian WZ (Qian Weizhong)
;
Wang YR (Wang Yuran)
;
Tan PH (Tan Pingheng)
  |  
收藏
  |  
浏览/下载:128/7
  |  
提交时间:2010/04/13
CHEMICAL-VAPOR-DEPOSITION
Chemical-vapor-deposition
Walled Carbon Nanotubes
Water
Ultralong
Catalysts
Mechanism
WALLED CARBON NANOTUBES
WATER
ULTRALONG
CATALYSTS
MECHANISM
A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3063-3066
Fan, HB
;
Yang, SY
;
Zhang, PF
;
Wei, HY
;
Liu, XL
;
Jiao, CM
;
Zhu, QS
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:80/3
  |  
提交时间:2010/03/08
SINGLE-CRYSTAL
PHASE EPITAXY
SAPPHIRE
NANORODS
FILMS
Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD
期刊论文
OAI收割
rare metal materials and engineering, 2007, 卷号: 36, 期号: 3, 页码: 416-419
Wei TB (Wei Tongbo)
;
Wang JX (Wang Junxi)
;
Li JM (Li Jinmin)
;
Liu Z (Liu Zhe)
;
Duan RF (Duan Ruifei)
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/29
GaN
Improved field emission properties from metal-coated diamond films
期刊论文
OAI收割
diamond and related materials, 2007, 卷号: 16, 期号: 3, 页码: 650-653
Zhao YM (Zhao Yongmei)
;
Zhang BL (Zhang Binglin)
;
Yao N (Yao Ning)
;
Sun GS (Sun Guosheng)
;
Li JM (Li Jinmin)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/29
MWPCVD diamond films
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
期刊论文
OAI收割
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Luo, MC
;
Li, JM
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/03/08
aluminum nitride
low pressure metalorganic chemical vapor deposition (LP-MOCVD)
V/III ratio
preferential orientation growth mechanism