中国科学院机构知识库网格系统: 检索

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	Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文 OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏 \| 浏览/下载：217/56 \| 提交时间：2010/03/08 ab initio calculations aluminium compounds annealing band structure chromium Curie temperature density functional theory exchange interactions (electron) ferromagnetic materials III-V semiconductors semimagnetic semiconductors total energy vacancies (crystal)
	Variational calculations of neutral bound excitons in GaAs quantum-well wires 期刊论文 OAI收割 chinese physics letters, 2004, 卷号: 21, 期号: 5, 页码: 919-922 Liu JJ; Di B; Yang GC; Li SS 收藏 \| 浏览/下载：217/51 \| 提交时间：2010/03/09 BINDING-ENERGY
	Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers 期刊论文 OAI收割 applied physics letters, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391 Xu SJ; Zheng LX; Cheung SH; Xie MH; Tong SY; Yang H 收藏 \| 浏览/下载：30/0 \| 提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY CUBIC GAN BINDING-ENERGY PHOTOLUMINESCENCE PRESSURE ELECTRON GAAS ALN
	Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells 期刊论文 OAI收割 european physical journal b, 2001, 卷号: 19, 期号: 1, 页码: 17-20 Liu JJ; Zhang SF; Li YX; Kong XJ 收藏 \| 浏览/下载：42/0 \| 提交时间：2010/08/12 BINDING-ENERGY 2-DIMENSIONAL SEMICONDUCTORS NEUTRAL DONORS BIEXCITONS PHOTOLUMINESCENCE IMPURITY
	Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires 期刊论文 OAI收割 physical review b, 1998, 卷号: 58, 期号: 4, 页码: 2031-2037 Chang K; Xia JB 收藏 \| 浏览/下载：45/0 \| 提交时间：2010/08/12 WELL WIRES DIMENSIONAL EXCITONS OPTICAL-PROPERTIES THRESHOLD CURRENT ELECTRIC-FIELD BINDING-ENERGY DEPENDENCE ABSORPTION SPECTRA