机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [6]
• 会议论文 [1]

发表日期

• 2013 [1]
• 2011 [1]
• 2010 [1]
• 2005 [3]
• 2004 [1]

学科主题

• 微电子学 [7]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：微电子学    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 22, 页码: 223507 Li, Xiaoming; Han, Weihua; Wang, Hao; Ma, Liuhong; Zhang, Yanbo; Du, Yandong; Yang, Fuhua 收藏  |  浏览/下载：17/0  |  提交时间：2014/05/08 T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文  OAI收割 applied physics a: materials science and processing, 2011, 页码: 1-5 Du, Y.D.; Cao, H.Z.; Yan, W.; Han, W.H.; Liu, Y.; Dong, X.Z.; Zhang, Y.B.; Jin, F.; Zhao, Z.S.; Yang, F.H.; Duan, X.M. 收藏  |  浏览/下载：13/0  |  提交时间：2012/06/14 Ablation  Drain current  Fabrication  Gallium nitride  High electron mobility transistors  Photoresists  Ultrashort pulses   Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots 期刊论文  OAI收割 japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: art. no. 104002 Li YQ (Li Yueqiang); Wang XD (Wang Xiaodong); Xu XN (Xu Xiaona); Liu W (Liu Wen); Chen YL (Chen Yanling); Yang FH (Yang Fuhua); Tan PH (Tan Pingheng); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：32/0  |  提交时间：2010/11/14 REAL-SPACE TRANSFER  2-DIMENSIONAL ELECTRON-GAS   Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 期刊论文  OAI收割 chinese physics letters, 2005, 卷号: 22, 期号: 3, 页码: 654-656 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：108/0  |  提交时间：2010/03/17 SCATTERING   Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文  OAI收割 acta physica sinica, 2005, 卷号: 54, 期号: 1, 页码: 348-353 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/17 SOI   X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD 期刊论文  OAI收割 半导体学报, 2005, 卷号: 26, 期号: 10, 页码: 1865-1870 作者:  Wang Cuimei 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/23 Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K 收藏  |  浏览/下载：167/30  |  提交时间：2010/03/29