机构

• 半导体研究所 [27]

采集方式

• OAI收割 [27]

内容类型

• 会议论文 [27]

发表日期

• 2008 [2]
• 2007 [1]
• 2004 [1]
• 2003 [3]
• 2002 [1]
• 2001 [2]
• 更多

学科主题

• 半导体材料 [15]
• 半导体物理 [9]
• 光电子学 [3]

筛选

浏览/检索结果: 共27条，第1-10条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH   Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文  OAI收割 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 SHORT-PERIOD SUPERLATTICES  RAMAN-SCATTERING  QUANTUM-WELLS  GROWTH  ROUGHNESS  SEGREGATION  ALAS/GAAS  ALAS  GAAS   Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition 会议论文  OAI收割 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 Zeng XB; Liao XB; Diao HW; Hu ZH; Xu YY; Zhang SB; Chen CY; Chen WD; Kong GL 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 LASER-ABLATION  SEMICONDUCTOR NANOWIRES  GROWTH  MECHANISM  EVAPORATION  DIAMETER  WIRES   High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文  OAI收割 symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002 Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY 收藏  |  浏览/下载：31/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ION-SCATTERING SPECTROSCOPY  LATTICE POLARITY  SINGLE-CRYSTALS  FILMS  POLARIZATION  GAN(0001)  SURFACES  GROWTH  DIODES   Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文  OAI收割 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 Feng G; Shen XM; Zhu JJ; Zhang BS; Yang H; Liang JW 收藏  |  浏览/下载：15/2  |  提交时间：2010/10/29 BUFFER LAYER  SUBSTRATE  DIODES  GROWTH   Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文  OAI收割 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 SI-GE ALLOYS  GROWTH  LAYERS   Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 low dimensional structures  molecular beam epitaxy  nanomaterials  INAS ISLANDS  GAAS  GROWTH  GAAS(100)  THICKNESS  DENSITY   Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文  OAI收割 9th international conference on high pressure semiconductor physics (hpsp9), sapporo, japan, sep 24-28, 2000 Li GH; Chen Y; Fung ZL; Ding K; Han HX; Zhou W; Wang ZG 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 HYDROSTATIC-PRESSURE  PHOTOLUMINESCENCE  GAAS  LUMINESCENCE  GROWTH  INSB  GASB