机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 会议论文 [7]

发表日期

• 2006 [1]
• 2001 [2]
• 1999 [2]
• 1998 [2]

学科主题

• 半导体材料 [3]
• 半导体器件 [2]
• 半导体物理 [2]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文  OAI收割 14th international conference on ion beam modification of materials (ibmm 2004), pacific grove, ca, sep 05-10, 2004 Zhang EX; Sun JY; Chen J; Chen M; Zhang ZX; Li N; Zhang GQ; Wang X 收藏  |  浏览/下载：215/45  |  提交时间：2010/03/29 nitrogen   Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy 会议论文  OAI收割 1st international symposium on microgravity research and applications in physical sciences and biotechnology, sorrento, italy, sep 10-15, 2000 Lu DC; Lin LY 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 TRANSPORT   First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文  OAI收割 2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998 Li Z; Dezilllie B; Eremin V; Li CJ; Verbitskaya E 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 strip detectors  silicon detectors  annealing  simulation  irradiation  N-EFF  JUNCTION DETECTORS  RADIATION-DAMAGE  MODELS   Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文  OAI收割 1998 nuclear science symposium (nss), toronto, canada, nov 08-14, 1998 Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 SILICON DETECTORS   Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文  OAI收割 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 作者:  Liu J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 GaAs/AlAs  superlattices  transport  tunnelling  Landau level  NEGATIVE DIFFERENTIAL CONDUCTIVITY  LOW-FIELD MOBILITY  SEMICONDUCTOR SUPERLATTICE  TEMPERATURE-DEPENDENCE  CONDUCTANCE  TRANSPORT  LOCALIZATION  MINIBANDS   High-concentration hydrogen in unintentionally doped GaN 会议论文  OAI收割 2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997 Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 gallium nitride  gas source molecular beam epitaxy  hydrogen  autodoping  FILMS