中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
  • OAI收割 [14]
内容类型
  • 会议论文 [14]
发表日期
学科主题
  • 半导体材料 [14]
筛选

浏览/检索结果: 共14条,第1-10条 帮助

限定条件            
条数/页: 排序方式:
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文  OAI收割
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY
收藏  |  浏览/下载:31/0  |  提交时间:2010/10/29
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文  OAI收割
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/15
Epitaxial growth of SiC on complex substrates 会议论文  OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文  OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文  OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15
High-quality GaN grown by gas-source MBE 会议论文  OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文  OAI收割
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15
GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy 会议论文  OAI收割
conference on optoelectronic and microelectronic materials and devices, bundoora, australia, dec 06-08, 2000
Pan Z; Li LH; Wang XY; Lin YW
收藏  |  浏览/下载:14/0  |  提交时间:2010/10/29
Self-organization of the InGaAs GaAs quantum dots superlattice 会议论文  OAI收割
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhuang QD; Li HX; Pan L; Li JM; Kong MY; Lin LY
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文  OAI收割
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/15
STRESS  GROWTH