中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
  • 半导体研究所 [5]
采集方式
内容类型
发表日期
  • 1996 [5]
学科主题
  • 半导体物理 [5]
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浏览/检索结果: 共5条,第1-5条 帮助

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Two-dimensional excitonic emission in InAs submonolayers 期刊论文  OAI收割
physical review b, 1996, 卷号: 54, 期号: 23, 页码: 16919-16924
Yuan ZL; Xu ZY; Zheng BZ; Xu JZ; Li SS; Ge WK; Wang Y; Wang J; Chang LL; Wang PD; Torres CMS; Ledentsov NN
收藏  |  浏览/下载:53/0  |  提交时间:2010/11/17
Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates 期刊论文  OAI收割
physical review b, 1996, 卷号: 54, 期号: 16, 页码: 11528-11531
Xu ZY; Lu ZD; Yang XP; Yuan ZL; Zheng BZ; Xu JZ; Ge WK; Wang Y; Wang J; Chang LL
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/17
Energy relaxation processes of hot quasi-two-dimensional excitons in very thin GaAs/AlGaAs quantum wells by exciton-acoustic-phonon interaction 期刊论文  OAI收割
journal of applied physics, 1996, 卷号: 79, 期号: 1, 页码: 424-426
Yuan ZL; Xu ZY; Xu JZ; Zheng BZ
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/17
Effective-mass theory for InAs/GaAs strained coupled quantum dots 期刊论文  OAI收割
physical review b, 1996, 卷号: 54, 期号: 16, 页码: 11575-11581
Li SS; Xia JB; Yuan ZL; Xu ZY; Ge WK; Wang XR; Wang Y; Wang J; Chang LL
收藏  |  浏览/下载:34/0  |  提交时间:2010/11/17
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption 期刊论文  OAI收割
journal of applied physics, 1996, 卷号: 79, 期号: 2, 页码: 1073-1077
Yuan ZL; Xu ZY; Zheng BZ; Luo CP; Xu JZ; Ge WK; Zhang PH; Yang XP
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/17