中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [9]
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  • 2019 [9]
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Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor 期刊论文  OAI收割
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 066804
作者:  Ya-Mei Dou ;   Wei-Hua Han ;   Yang-Yan Guo ;   Xiao-Song Zhao ;   Xiao-Di Zhang ;   Xin-Yu Wu ;   Fu-Hua Yang
  |  收藏  |  浏览/下载：43/0  |  提交时间：2020/08/05
Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors 期刊论文  OAI收割
Chinese Physics B, 2019, 卷号: 28, 期号: 10, 页码: 107303
作者:  Yang-Yan Guo;  Wei-Hua Han;  Xiao-Song Zhao;  Ya-Mei Dou;  Xiao-Di Zhang;  Xin-Yu Wu ;   Fu-Hua Yang
  |  收藏  |  浏览/下载：3/0  |  提交时间：2020/08/05
Asymmetry Analysis of the Resonance Curve in Resonant Integrated Optical Gyroscopes 期刊论文  OAI收割
Sensors, 2019, 卷号: 19, 页码: 3305
作者:  Yu Ming He;   Fu Hua Yang ;   Wei Yan ;   Wei Hua Han;   Zhao Feng Li
  |  收藏  |  浏览/下载：9/0  |  提交时间：2020/08/05
Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor 期刊论文  OAI收割
Chin. Phys. B, 2019, 卷号: 28, 期号: 12, 页码: 127302
作者:  Xiao-Di Zhang ;   Wei-Hua Han ;   Wen Liu ;   Xiao-Song Zhao ;   Yang-Yan Guo ;   Chong Yang ;   Jun-Dong Chen ;   Fu-Hua Yang
  |  收藏  |  浏览/下载：11/0  |  提交时间：2020/08/05
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文  OAI收割
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
作者:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
  |  收藏  |  浏览/下载：20/0  |  提交时间：2020/07/31
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文  OAI收割
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
作者:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
  |  收藏  |  浏览/下载：17/0  |  提交时间：2020/08/04
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文  OAI收割
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
作者:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
  |  收藏  |  浏览/下载：17/0  |  提交时间：2020/07/31
The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition 期刊论文  OAI收割
Materials Science in Semiconductor Processing, 2019, 卷号: 94, 页码: 107-115
作者:  Jun Chen ;   Bowen Lv ;   Feng Zhang ;   Yinshu Wang ;   Xingfang Liu ;   Guoguo Yan ;   Zhanwei Shen ;   Zhengxin Wen ;   Lei Wang ;   Wanshun Zhao ;   Guosheng Sun ;   Chao Liu ;   Yiping Zeng
  |  收藏  |  浏览/下载：23/0  |  提交时间：2020/07/31
Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文  OAI收割
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504
作者:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
  |  收藏  |  浏览/下载：6/0  |  提交时间：2020/07/31