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CAS IR Grid
机构
半导体研究所 [25]
采集方式
OAI收割 [25]
内容类型
期刊论文 [25]
发表日期
2010 [2]
2009 [2]
2008 [3]
2007 [3]
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2005 [7]
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学科主题
光电子学 [25]
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学科主题:光电子学
内容类型:期刊论文
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Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist
期刊论文
OAI收割
ieee photonics technology letters, 2010, 卷号: 22, 期号: 7, 页码: 501-503
Liu Y (Liu Yan)
;
Xu XJ (Xu Xuejun)
;
Xing B (Xing Bo)
;
Yu YD (Yu Yude)
;
Yu JZ (Yu Jinzhong)
收藏
  |  
浏览/下载:92/1
  |  
提交时间:2010/04/22
Silicon-on-insulator (SOI)
The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801
Hu XL (Hu Xiao-Long)
;
Zhang JY (Zhang Jiang-Yong)
;
Shang JZ (Shang Jing-Zhi)
;
Liu WJ (Liu Wen-Jie)
;
Zhang BP (Zhang Bao-Ping)
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/12/28
exciton-longitudinal-optical-phonon
InGaN/GaN single quantum well
GaN cap layer
Huang-Rhys factor
Fabrication and optical optimization of spot-size converters with strong cladding layers
期刊论文
OAI收割
journal of optics a-pure and applied optics, 2009, 卷号: 11, 期号: 8, 页码: art. no. 085002
作者:
Li Y
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2010/03/08
silicon-on-insulator (SOI)
spot-size converters
A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions
期刊论文
OAI收割
chinese physics b, 2009, 卷号: 18, 期号: 7, 页码: 3044-3048
Ding WC
;
Liu Y
;
Zhang Y
;
Guo JC
;
Zuo YH
;
Cheng BW
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:117/2
  |  
提交时间:2010/03/08
Er doping
silicon nitride
photoluminescence
Small SiGe quantum dots obtained by excimer laser annealing
期刊论文
OAI收割
journal of crystal growth, 2008, 卷号: 310, 期号: 16, 页码: 3746-3751
Han GQ
;
Zeng YG
;
Liu Y
;
Yu JZ
;
Cheng BW
;
Yang HT
收藏
  |  
浏览/下载:61/1
  |  
提交时间:2010/03/08
diffusion
n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys
期刊论文
OAI收割
ieee photonics technology letters, 2008, 卷号: 20, 期号: 39941, 页码: 419-421
Han, GQ
;
Yu, JZ
;
Liu, Y
收藏
  |  
浏览/下载:115/0
  |  
提交时间:2010/03/08
quantum cascade (QC) structure
SiGe
Modelling and analysis of modal behaviour in SOI slot waveguides
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 2918-2921
Liu Y
;
Xu XJ
;
Chen SW
;
Yu JZ
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/03/08
CONFINING LIGHT
Geometry parameter optimization of large cross-sectional S-shaped bent rib waveguides for silicon based optical switches
期刊论文
OAI收割
chinese physics letters, 2007, 卷号: 24, 期号: 3, 页码: 744-746
Li ZY (Li Zhi-Yong)
;
Liu JW (Liu Jing-Wei)
;
Yu JZ (Yu Jin-Zhong)
收藏
  |  
浏览/下载:104/0
  |  
提交时间:2010/03/29
摘要: By using a genetic algorithm
geometry parameters of large cross-sectional S-bend rib waveguides are optimized aiming at the least total loss when the propagation loss is considered. Optimized results are presented as an example of S-bend rib waveguides based on silicon-on-insulator (SOI) 4 x 4 optical switches. The value of 2dB/cm is given to the propagation loss according to the experimental results. The simulation results indicate that the total loss drops from 1.0002dB down to 0.4375dB without considering a lateral offset. If the offset is adopted
the total loss reduces from 0.5463dB to 0.2365dB. In addition
the effect of the rib height ratio on the loss is analysed
and the optimal ratio is obtained to be 0.55.
Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer
期刊论文
OAI收割
applied physics letters, 2007, 卷号: 91, 期号: 3, 页码: art.no.031103
作者:
Chen P
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2010/03/29
QUANTUM-WELLS
Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching
期刊论文
OAI收割
chinese optics letters, 2007, 卷号: 5, 期号: 4, 页码: 215-217
作者:
Li ZY
收藏
  |  
浏览/下载:68/14
  |  
提交时间:2010/03/08
SILICON-ON-INSULATOR