机构

• 半导体研究所 [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [4]

发表日期

• 2016 [2]
• 2015 [2]

学科主题

• 半导体材料 [4]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文  OAI收割 semiconductor science and technology, 2016, 卷号: 31, 期号: 12, 页码: 125003 Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文  OAI收割 journal of applied physics, 2016, 卷号: 120, 期号: 12, 页码: 124501 Junda Yan; Quan Wang; Xiaoliang Wang; Chun Feng; Hongling Xiao; Shiming Liu; Jiamin Gong; Fengqi Liu; Baiquan Li 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文  OAI收割 phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161 He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29 A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文  OAI收割 chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504 Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang 收藏  |  浏览/下载：28/0  |  提交时间：2016/03/29