机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 会议论文 [6]

发表日期

• 2008 [1]
• 2004 [1]
• 2003 [1]
• 2002 [1]
• 2000 [1]
• 1999 [1]
• 更多

学科主题

• 半导体材料 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z 收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09 QUANTUM-WELLS  SPIN   Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文  OAI收割 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 SHORT-PERIOD SUPERLATTICES  RAMAN-SCATTERING  QUANTUM-WELLS  GROWTH  ROUGHNESS  SEGREGATION  ALAS/GAAS  ALAS  GAAS   Growth and photoluminescence of InAlGaN films 会议论文  OAI收割 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 作者:  Li DB 收藏  |  浏览/下载：13/2  |  提交时间：2010/10/29 MULTIPLE-QUANTUM WELLS  QUATERNARY ALLOYS  OPTICAL-PROPERTIES   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文  OAI收割 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 作者:  Zhang JY;  Jiang DS 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 double multi-quantum wells  photocurrent spectra  ZnCdSe-ZnSe  SPECTROSCOPY  PHOTOLUMINESCENCE  HETEROSTRUCTURES  PHOTODETECTORS