机构

• 半导体研究所 [5]
• 长春光学精密机械与物... [3]
• 物理研究所 [2]
• 上海光学精密机械研究... [1]

采集方式

• OAI收割 [9]
• iSwitch采集 [2]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2014 [1]
• 2013 [2]
• 2008 [3]
• 2005 [1]
• 2004 [2]
• 2000 [1]
• 更多

学科主题

• 光学材料;晶体 [1]
• 半导体器件 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 795 nm VCSELs for 87Rb based miniaturized atomic clock 期刊论文  OAI收割 Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2014, 卷号: 22, 期号: 1, 页码: 50-57 作者:  Ning Y.-Q.;  Zhang J.;  Zhang J.;  Zhang J.;  Wang L.-J. 收藏  |  浏览/下载：32/0  |  提交时间：2015/04/24 Preproduction prediction of the optical normalized reflectance transient of MOVPE-grown AlGaAs films using transfer matrix method 期刊论文  OAI收割 Optik, 2013, 卷号: 124, 期号: 18 作者:  Zhang J.;  Zhang J.;  Zhang J. 收藏  |  浏览/下载：16/0  |  提交时间：2014/05/14 Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells 期刊论文  OAI收割 NEW JOURNAL OF PHYSICS, 2013, 卷号: 15 Balocchi, A; Amand, T; Wang, G; Liu, BL; Renucci, P; Duong, QH; Marie, X 收藏  |  浏览/下载：18/0  |  提交时间：2014/01/16 Broadband emitting superluminescent diodes with inas quantum dots in algaas matrix 期刊论文  iSwitch采集 Ieee photonics technology letters, 2008, 卷号: 20, 期号: 17-20, 页码: 1742-1744 作者:  Lv, X. Q.;  Liu, N.;  Jin, P.;  Wang, Z. G. 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Algaas matrix  Broadband emitting  Quantum dots (qds)  Superluminescent diodes (slds)   Tm:Y_2SiO_5晶体的生长和光谱性质研究 期刊论文  OAI收割 物理学报, 2008, 卷号: 57, 期号: 8, 页码: 5007, 5014 王晓丹; 徐晓东; 赵志伟; 徐文伟; 吴峰; 徐军 收藏  |  浏览/下载：834/203  |  提交时间：2009/09/24 Tm : Y2SiO5  monoclinic system  absorption spectra  fluorescence spectra   Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix 期刊论文  OAI收割 ieee photonics technology letters, 2008, 卷号: 20, 期号: 17-20, 页码: 1742-1744 Lv, XQ; Liu, N; Jin, P; Wang, ZG 收藏  |  浏览/下载：16/0  |  提交时间：2010/03/08 AlGaAs matrix  broadband emitting  quantum dots (QDs)  superluminescent diodes (SLDs)   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Formation of ferromagnetic clusters in gaas matrix and gaas/algaas superlattice through mn ion implantation at two different temperatures 期刊论文  iSwitch采集 Journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 12-17 作者:  Wang, CH;  Chen, YH;  Yu, G;  Wang, ZG 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Nanomaterials  Magnetic materials  Semiconducting iii-v materials   Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 12-17 Wang CH; Chen YH; Yu G; Wang ZG 收藏  |  浏览/下载：263/86  |  提交时间：2010/03/09 nanomaterials   Temperature dependence of polaron cyclotron resonance mass in GaAs/AlGaAs heterostructures 期刊论文  OAI收割 communications in theoretical physics, 2000, 卷号: 34, 期号: 2, 页码: 207-210 Wu XG 收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12 polaron  cyclotron resonance  GaAs heterostructure  ELECTRON-PHONON INTERACTIONS  GAAS-GAALAS HETEROJUNCTIONS  QUANTUM-WELL  SPECTRUM