机构

• 半导体研究所 [15]
• 物理研究所 [6]
• 长春光学精密机械与物... [4]
• 苏州纳米技术与纳米仿... [3]
• 西安光学精密机械研究... [3]
• 金属研究所 [2]
• 更多

采集方式

• OAI收割 [34]
• iSwitch采集 [4]

内容类型

• 期刊论文 [31]
• 会议论文 [5]
• 专利 [2]

发表日期

• 2021 [1]
• 2020 [3]
• 2019 [2]
• 2017 [1]
• 2016 [2]
• 2015 [1]
• 更多

学科主题

• 光电子学 [4]
• 半导体材料 [4]
• 半导体器件 [2]

筛选

浏览/检索结果: 共38条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel 期刊论文  OAI收割 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 卷号: 134, 页码: 106013 作者:  BSRF用户   |  收藏  |  浏览/下载：7/0  |  提交时间：2022/09/15 Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes 期刊论文  OAI收割 JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2020, 卷号: 160, 页码: e60167 作者:  Xiang Zhang ;   Zhaolong Chen ;   Hongliang Chang;   Jianchang Yan ;   Shenyuan Yang ;   Junxi Wang ;   Peng Gao;   Tongbo Wei   |  收藏  |  浏览/下载：11/0  |  提交时间：2021/06/16 Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes 期刊论文  OAI收割 Ecs Journal of Solid State Science and Technology, 2020, 卷号: 9, 期号: 4, 页码: 5 作者:  H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui   |  收藏  |  浏览/下载：30/0  |  提交时间：2021/07/06 Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification 期刊论文  OAI收割 Applied Surface Science, 2020, 卷号: 518, 页码: 7 作者:  B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou   |  收藏  |  浏览/下载：8/0  |  提交时间：2021/07/06 Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch 期刊论文  OAI收割 Scientific Reports, 2019, 卷号: 9, 期号: 9 作者:  H.P.Hu;  S.J.Zhou;  H.Wan;  X.T.Liu;  N.Li   |  收藏  |  浏览/下载：23/0  |  提交时间：2020/08/24 light-emitting-diodes,gan,efficiency,stress,aln,Science & Technology - Other Topics   Light Extraction Analysis of A1GaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method 期刊论文  OAI收割 Micromachines, 2019, 卷号: 10, 期号: 12, 页码: 13 作者:  S.Y.Lan;  H.Wan;  J.Zhao;  S.J.Zhou   |  收藏  |  浏览/下载：24/0  |  提交时间：2020/08/24 micro-scale light emitting diode,light extraction efficiency,sapphire,substrate,encapsulation,emitting-diodes,high-power   Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity Structure 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 11, 页码: 4424-4429 作者:  Sheikhi, Moheb;  Li, Junmei;  Meng, Fanping;  Li, Hongwei;  Guo, Shiping   |  收藏  |  浏览/下载：17/0  |  提交时间：2017/12/25 Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate 期刊论文  OAI收割 OPTICAL MATERIALS EXPRESS, 2016, 卷号: 6, 期号: 6 作者:  Jiang, T;  Xu, SR;  Zhang, JC;  Li, PX;  Huang, J(黄俊) 收藏  |  浏览/下载：29/0  |  提交时间：2017/03/11 GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography 期刊论文  OAI收割 Optoelectronics Letters, 2016 作者:  Sang, Wei-hua;  Lin, Lu;  Wang, Long;  Min, Jia-hua;  Zhu, Jian-jun 收藏  |  浏览/下载：14/0  |  提交时间：2017/03/11 Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes 期刊论文  OAI收割 optics express, Optics Express, 2015, 2015, 卷号: 23, 23, 期号: 15, 页码: a957-a965, A957-A965 作者:  Liang Shan;  Tongbo Wei;  Yuanping Sun;  Yonghui Zhang;  Aigong Zhen   |  收藏  |  浏览/下载：10/0  |  提交时间：2016/04/15