中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共15条,第1-10条 帮助

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Evidence of the nontrivial Berry phase at ?-Al2O3/SrTiO3 heterointerfaces 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2022, 卷号: 121
作者:  
Niu, Wei;  Wu, Zhenqi;  Chen, Yongda;  Gan, Yulin;  Chen, Yequan
  |  收藏  |  浏览/下载:33/0  |  提交时间:2022/12/22
Sustainable development of microalgal biotechnology in coastal zone for aquaculture and food 期刊论文  OAI收割
SCIENCE OF THE TOTAL ENVIRONMENT, 2021, 卷号: 780, 页码: 10
作者:  
Lu, Xiangning;  Cui, Yulin;  Chen, Yuting;  Xiao, Yupeng;  Song, Xiaojin
  |  收藏  |  浏览/下载:68/0  |  提交时间:2021/06/22
Fine structure of alpha decay in Pa-222 期刊论文  OAI收割
CHINESE PHYSICS C, 2021, 卷号: 45, 期号: 4, 页码: 6
作者:  
Hua, Wei;  Zhang, Zhiyuan;  Ma, Long;  Gan, Zaiguo;  Yang, Huabin
  |  收藏  |  浏览/下载:36/0  |  提交时间:2021/12/10
alpha-decay study of Ac-218 and Th-221 in Ar-40+W-186 reaction * 期刊论文  OAI收割
CHINESE PHYSICS C, 2021, 卷号: 45, 期号: 4, 页码: 6
作者:  
Hua, Wei;  Zhang, Zhiyuan;  Ma, Long;  Gan, Zaiguo;  Yang, Huabin
  |  收藏  |  浏览/下载:34/0  |  提交时间:2021/12/10
Diluted Oxide Interfaces with Tunable Ground States 期刊论文  OAI收割
ADVANCED MATERIALS, 2019, 卷号: 31, 期号: 10
作者:  
Gan, Yulin;  Christensen, Dennis Valbjorn;  Zhang, Yu;  Zhang, Hongrui;  Krishnan, Dileep
  |  收藏  |  浏览/下载:44/0  |  提交时间:2019/12/18
Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors 期刊论文  OAI收割
Semiconductor Science and Technology, 2019, 卷号: 34, 期号: 12, 页码: 125006
作者:  
Weizhen Yao;  Lianshan Wang;  Fangzheng Li;  Yulin Meng;  Shaoyan Yang ;   Zhanguo Wang
  |  收藏  |  浏览/下载:30/0  |  提交时间:2020/07/30
Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文  OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
作者:  
Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
  |  收藏  |  浏览/下载:31/0  |  提交时间:2019/11/15
Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文  OAI收割
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
作者:  
Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
  |  收藏  |  浏览/下载:31/0  |  提交时间:2019/11/15
Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
作者:  
Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
  |  收藏  |  浏览/下载:34/0  |  提交时间:2019/11/15
Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105
作者:  
Guijuan Zhao;   Lianshan Wang;   Huijie Li;   Yulin Meng;   Fangzheng Li;   Shaoyan Yang;   Zhanguo Wang
  |  收藏  |  浏览/下载:34/0  |  提交时间:2019/11/15