机构

• 新疆理化技术研究所 [21]
• 青岛生物能源与过程研... [4]
• 近代物理研究所 [4]
• 过程工程研究所 [2]
• 地质与地球物理研究所 [1]
• 新疆生态与地理研究所 [1]
• 更多

采集方式

• OAI收割 [36]

内容类型

• 期刊论文 [34]
• 会议论文 [2]

发表日期

• 2022 [1]
• 2021 [2]
• 2020 [1]
• 2019 [3]
• 2018 [7]
• 2017 [6]
• 更多

学科主题

• Physics [2]
• Nuclear Sc... [1]

筛选

浏览/检索结果: 共36条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214 作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]   |  收藏  |  浏览/下载：36/0  |  提交时间：2022/04/07 Total ionizing dose irradiation  UTBB FD-SOI  1  f noise   Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1   |  收藏  |  浏览/下载：38/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |  浏览/下载：38/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)   Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566 作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]   |  收藏  |  浏览/下载：25/0  |  提交时间：2020/12/11 SiC MOSFET  total ionizing dose irradiation  time-dependent dielectric breakdown   Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |  浏览/下载：88/0  |  提交时间：2019/11/10 Single-event multiple-cell upsets (MCUs)  static random access memory  total ionizing dose (TID)   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ]   |  收藏  |  浏览/下载：115/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文  OAI收割 RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5 作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ]   |  收藏  |  浏览/下载：9/0  |  提交时间：2020/03/20 Hot carrier effect  PMOS  Total ionizing dose effect   Strain tunable ionic transport properties and electrochemical window of Li10GeP2S12 superionic conductor 期刊论文  OAI收割 COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 153, 页码: 170-175 作者:  Chen, Bingbing;  Ju, Jiangwei;  Ma, Jun;  Du, Huiping;  Xiao, Ruijuan   |  收藏  |  浏览/下载：68/0  |  提交时间：2018/12/21 Strain  Ionic transport  Solid electrolyte  First principles  All-solid-state lithium batteries   Total Ionizing Dose Characterization of a SRAM in 28nm UTBB FDSOI Technology 会议论文  OAI收割 作者:  Qiwen Zheng;  mengxin Liu;  Jiangwei Cui;  Shanxue Xi;  Ying Wei   |  收藏  |  浏览/下载：38/0  |  提交时间：2019/05/10 The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文  OAI收割 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |  浏览/下载：49/0  |  提交时间：2018/10/08 Charge sharing  single-event upset (SEU)  static random access memory  total ionizing dose (TID)