中国科学院机构知识库网格系统: 检索

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	The influence of 1 nm aln interlayer on properties of the al0.3ga0.7n/aln/gan hemt structure 期刊论文 iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 作者: Guo, Lunchun; Wang, Xiaoliang; Wang, Cuimei; Mao, Hongling; Ran, Junxue 收藏 \| 浏览/下载：33/0 \| 提交时间：2019/05/12 Gan Hemt 2deg Mobility Polarization
	Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate 期刊论文 iSwitch采集 Journal of crystal growth, 2007, 卷号: 298, 页码: 791-793 作者: Wang, Xiaoliang; Wang, Cuimei; Hu, Guoxin; Mao, Hongling; Fang, Cebao 收藏 \| 浏览/下载：20/0 \| 提交时间：2019/05/12 2deg Electron mobility Mocvd Semiconducting iii-v materials Hemt
	MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文 OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏 \| 浏览/下载：44/0 \| 提交时间：2010/03/29 2DEG
	Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文 OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803 Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo) 收藏 \| 浏览/下载：40/0 \| 提交时间：2010/03/29 deep defect
	Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer 期刊论文 iSwitch采集 Journal of crystal growth, 2007, 卷号: 298, 页码: 800-803 作者: Fang, Cebao; Wang, Xiaoliang; Xiao, Hongling; Hu, Guoxin; Wang, Cuimei 收藏 \| 浏览/下载：18/0 \| 提交时间：2019/05/12 Deep defect Optical quenching Mocvd Gan