中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
物理研究所 [37]
高能物理研究所 [11]
新疆理化技术研究所 [8]
半导体研究所 [5]
金属研究所 [4]
上海应用物理研究所 [4]
更多
采集方式
OAI收割 [77]
iSwitch采集 [3]
内容类型
期刊论文 [79]
会议论文 [1]
发表日期
2022 [2]
2021 [3]
2020 [6]
2018 [7]
2017 [3]
2015 [34]
更多
学科主题
Metallurgy... [4]
Physics [4]
Materials ... [3]
Nanoscienc... [2]
半导体材料 [2]
半导体物理 [2]
更多
筛选
浏览/检索结果:
共80条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Context-wise attention-guided network for single image deraining
期刊论文
OAI收割
ELECTRONICS LETTERS, 2022, 卷号: 58, 期号: 4, 页码: 148-150
作者:
Fu B(傅博)
;
Jiang Y(姜勇)
;
Wang HG(王洪光)
;
Wang Q(王强)
;
Gao, Qian
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/12/20
Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
  |  
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
期刊论文
OAI收割
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:
Liu, BK (Liu Bingkai)[ 1,2,3 ]
;
Li, YD (Li Yudong)[ 1,2 ]
;
Wen, L (Wen Lin)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2021/05/10
Backside‐
illuminated CMOS image sensors
Dark signal behaviors
Displacement damage effects
Neutron irradiation
Ground experiment of a 50 mm balloon-borne coronagraph for near space project
会议论文
OAI收割
Chengdu, China, 2021-06-14
作者:
Liu Y(刘煜)
;
Zhang XF(张雪飞)
;
Song TF(宋腾飞)
;
Sun, Mingzhe
;
Liu, Dayang
  |  
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2022/03/07
coronagraph
scattered light
near space
Mt. Wumingshan
polarization brightness
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors
期刊论文
OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:
Feng, J (Feng, Jie) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2]
;
Wen, L (Wen, Lin) [1] , [2]
;
Guo, Q (Guo, Qi) [1] , [2]
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/03/24
CMOS Color Image Sensor
Ionization Damage
Radiation-Sensitive Parameters
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
Fabricating Pd isolated single atom sites on C3N4/rGO for heterogenization of homogeneous catalysis
期刊论文
OAI收割
NANO RESEARCH, 2020, 卷号: 13, 期号: 4, 页码: 947-951
作者:
Fu, NH
;
Liang, X
;
Li, Z
;
Chen, WX
;
Wang, Y
  |  
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2021/09/06
GRAPHENE-OXIDE
NANOCRYSTALS
OXIDATION
REACTORS
STRATEGY
CO
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
期刊论文
OAI收割
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2021/03/19
Backside illuminated CMOS image sensor
Random telegraph signal
Radiation effects
Proton irradiation
Theoretical calculation