中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共6条，第1-6条

帮助

条数/页：排序方式：
	Pressure dependence of the electronic subband structure of strained in0.2ga0.8as/gaas mqws 期刊论文 iSwitch采集 Physica status solidi b-basic solid state physics, 1996, 卷号: 198, 期号: 1, 页码: 329-335 作者: Li, GH; Goni, AR; Syassen, K; Hou, HQ; Feng, W 收藏 \| 浏览/下载：27/0 \| 提交时间：2019/05/12
	Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs 期刊论文 OAI收割 physica status solidi b-basic research, 1996, 卷号: 198, 期号: 1, 页码: 329-335 Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM 收藏 \| 浏览/下载：53/0 \| 提交时间：2010/11/17 MULTIPLE QUANTUM-WELLS HYDROSTATIC-PRESSURE DEFORMATION POTENTIALS EXCITON ABSORPTION PHOTOLUMINESCENCE SPECTROSCOPY GAAS
	High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells 期刊论文 OAI收割 physical review b, 1996, 卷号: 54, 期号: 19, 页码: 13820-13826 Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM 收藏 \| 浏览/下载：66/0 \| 提交时间：2010/11/17 HYDROSTATIC-PRESSURE EXCITON ABSORPTION DEFORMATION POTENTIALS LAYER SUPERLATTICES BAND OFFSET PHOTOLUMINESCENCE GAAS SPECTROSCOPY DEPENDENCE TEMPERATURE
	HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS 期刊论文 OAI收割 journal of physics and chemistry of solids, 1995, 卷号: 56, 期号: 0, 页码: 385-388 LI GH; GONI AR; SYASSEN K; BRANDT O; PLOOG K 收藏 \| 浏览/下载：17/0 \| 提交时间：2010/11/17 NANOSTRUCTURES SEMICONDUCTORS HIGH PRESSURE LUMINESCENCE HYDROSTATIC-PRESSURE ELECTRONIC-STRUCTURE GAAS MATRIX SUPERLATTICES TRANSITION EXCITONS
	STATE MIXING IN INAS/GAAS QUANTUM DOTS AT THE PRESSURE-INDUCED GAMMA-X CROSSING 期刊论文 OAI收割 physical review b, 1994, 卷号: 50, 期号: 24, 页码: 18420-18425 LI GH; GONI AR; SYASSEN K; BRANDT O; PLOOG K 收藏 \| 浏览/下载：79/0 \| 提交时间：2010/11/17 DIAMOND-ANVIL CELL HYDROSTATIC-PRESSURE ELECTRONIC-STRUCTURE OPTICAL-PROPERTIES GAAS MATRIX SUPERLATTICES SPECTROSCOPY TRANSITION EXCITONS